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The oxide layer charging in SIMOX structures. / Askinazi, A. Yu; Baraban, A. P.; Dmitriev, V. A.; Miloglyadova, L. V.

In: Technical Physics Letters, Vol. 27, No. 5, 01.05.2001, p. 422-423.

Research output: Contribution to journal › Article › peer-review

Harvard

Askinazi, AY, Baraban, AP, Dmitriev, VA & Miloglyadova, LV 2001, 'The oxide layer charging in SIMOX structures', Technical Physics Letters, vol. 27, no. 5, pp. 422-423. https://doi.org/10.1134/1.1376771

APA

Askinazi, A. Y., Baraban, A. P., Dmitriev, V. A., & Miloglyadova, L. V. (2001). The oxide layer charging in SIMOX structures. Technical Physics Letters, 27(5), 422-423. https://doi.org/10.1134/1.1376771

Vancouver

Askinazi AY, Baraban AP, Dmitriev VA, Miloglyadova LV. The oxide layer charging in SIMOX structures. Technical Physics Letters. 2001 May 1;27(5):422-423. https://doi.org/10.1134/1.1376771

Author

Askinazi, A. Yu ; Baraban, A. P. ; Dmitriev, V. A. ; Miloglyadova, L. V. / The oxide layer charging in SIMOX structures. In: Technical Physics Letters. 2001 ; Vol. 27, No. 5. pp. 422-423.

BibTeX

@article{f43f339de5074f21b9efe8551dd36296,
title = "The oxide layer charging in SIMOX structures",
abstract = "The depth profile analysis, based on the measurement of high-frequency capacitance-voltage characteristics of an electrolyte-insulator-semiconductor system in the course of the layer-by-layer insulator removal by etching, showed that the formation of a SIMOX structure is accompanied by the appearance of positively charged defects in the oxide layer at the oxide-silicon interface. A change in the charge state of the SIMOX structures under the action of an applied electric field, near ultraviolet (UV) radiation, and low-temperature annealing was studied.",
author = "Askinazi, {A. Yu} and Baraban, {A. P.} and Dmitriev, {V. A.} and Miloglyadova, {L. V.}",
year = "2001",
month = may,
day = "1",
doi = "10.1134/1.1376771",
language = "English",
volume = "27",
pages = "422--423",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",

}

RIS

TY - JOUR

T1 - The oxide layer charging in SIMOX structures

AU - Askinazi, A. Yu

AU - Baraban, A. P.

AU - Dmitriev, V. A.

AU - Miloglyadova, L. V.

PY - 2001/5/1

Y1 - 2001/5/1

N2 - The depth profile analysis, based on the measurement of high-frequency capacitance-voltage characteristics of an electrolyte-insulator-semiconductor system in the course of the layer-by-layer insulator removal by etching, showed that the formation of a SIMOX structure is accompanied by the appearance of positively charged defects in the oxide layer at the oxide-silicon interface. A change in the charge state of the SIMOX structures under the action of an applied electric field, near ultraviolet (UV) radiation, and low-temperature annealing was studied.

AB - The depth profile analysis, based on the measurement of high-frequency capacitance-voltage characteristics of an electrolyte-insulator-semiconductor system in the course of the layer-by-layer insulator removal by etching, showed that the formation of a SIMOX structure is accompanied by the appearance of positively charged defects in the oxide layer at the oxide-silicon interface. A change in the charge state of the SIMOX structures under the action of an applied electric field, near ultraviolet (UV) radiation, and low-temperature annealing was studied.

UR - http://www.scopus.com/inward/record.url?scp=0035534741&partnerID=8YFLogxK

U2 - 10.1134/1.1376771

DO - 10.1134/1.1376771

M3 - Article

AN - SCOPUS:0035534741

VL - 27

SP - 422

EP - 423

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 5

ER -

ID: 41086408