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The influence of the preparation technique and thickness of As 2Se3 · AgBr glass layers on the electrical conductivity. / Tver'yanovich, Yu S.; Zyukhin, I. S.; Borisov, E. N.; Volobueva, O.; Bobylev, Yu V.

In: Glass Physics and Chemistry, Vol. 32, No. 2, 01.03.2006, p. 214-217.

Research output: Contribution to journalArticlepeer-review

Harvard

Tver'yanovich, YS, Zyukhin, IS, Borisov, EN, Volobueva, O & Bobylev, YV 2006, 'The influence of the preparation technique and thickness of As 2Se3 · AgBr glass layers on the electrical conductivity', Glass Physics and Chemistry, vol. 32, no. 2, pp. 214-217. https://doi.org/10.1134/S1087659606020143

APA

Tver'yanovich, Y. S., Zyukhin, I. S., Borisov, E. N., Volobueva, O., & Bobylev, Y. V. (2006). The influence of the preparation technique and thickness of As 2Se3 · AgBr glass layers on the electrical conductivity. Glass Physics and Chemistry, 32(2), 214-217. https://doi.org/10.1134/S1087659606020143

Vancouver

Author

Tver'yanovich, Yu S. ; Zyukhin, I. S. ; Borisov, E. N. ; Volobueva, O. ; Bobylev, Yu V. / The influence of the preparation technique and thickness of As 2Se3 · AgBr glass layers on the electrical conductivity. In: Glass Physics and Chemistry. 2006 ; Vol. 32, No. 2. pp. 214-217.

BibTeX

@article{87262e568e124aba897ffe2512f2890b,
title = "The influence of the preparation technique and thickness of As 2Se3 · AgBr glass layers on the electrical conductivity",
abstract = "A glass of the composition 0.5As2Se3 · 0.5AgBr is prepared in three forms: a monolithic sample, a film 1 μm thick, and layers ∼20 nm thick separated by vitreous arsenic selenide layers of the same thickness. The temperature dependences of the electrical conductivity are investigated for all three objects. The results obtained are discussed taking into account the specific features of the technique used for evaporating the films and the mutual influence of alternating vitreous nanolayers.",
author = "Tver'yanovich, {Yu S.} and Zyukhin, {I. S.} and Borisov, {E. N.} and O. Volobueva and Bobylev, {Yu V.}",
year = "2006",
month = mar,
day = "1",
doi = "10.1134/S1087659606020143",
language = "English",
volume = "32",
pages = "214--217",
journal = "Glass Physics and Chemistry",
issn = "1087-6596",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - The influence of the preparation technique and thickness of As 2Se3 · AgBr glass layers on the electrical conductivity

AU - Tver'yanovich, Yu S.

AU - Zyukhin, I. S.

AU - Borisov, E. N.

AU - Volobueva, O.

AU - Bobylev, Yu V.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - A glass of the composition 0.5As2Se3 · 0.5AgBr is prepared in three forms: a monolithic sample, a film 1 μm thick, and layers ∼20 nm thick separated by vitreous arsenic selenide layers of the same thickness. The temperature dependences of the electrical conductivity are investigated for all three objects. The results obtained are discussed taking into account the specific features of the technique used for evaporating the films and the mutual influence of alternating vitreous nanolayers.

AB - A glass of the composition 0.5As2Se3 · 0.5AgBr is prepared in three forms: a monolithic sample, a film 1 μm thick, and layers ∼20 nm thick separated by vitreous arsenic selenide layers of the same thickness. The temperature dependences of the electrical conductivity are investigated for all three objects. The results obtained are discussed taking into account the specific features of the technique used for evaporating the films and the mutual influence of alternating vitreous nanolayers.

UR - http://www.scopus.com/inward/record.url?scp=33646414218&partnerID=8YFLogxK

U2 - 10.1134/S1087659606020143

DO - 10.1134/S1087659606020143

M3 - Article

AN - SCOPUS:33646414218

VL - 32

SP - 214

EP - 217

JO - Glass Physics and Chemistry

JF - Glass Physics and Chemistry

SN - 1087-6596

IS - 2

ER -

ID: 61802080