Research output: Contribution to journal › Article › peer-review
The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices. / Davydov, Valery; Roginskii, Eugene; Kitaev, Yuri; Eliseyev, Ilya; Zavarin, Eugene; Lundin, Wsevolod; Nechaev, Dmitrii; Jmerik, Valentin; Smirnov, Mikhail; Pristovsek, Markus; Shubina, Tatiana.
In: Nanomaterials, Vol. 11, No. 9, 2396, 14.09.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices
AU - Davydov, Valery
AU - Roginskii, Eugene
AU - Kitaev, Yuri
AU - Eliseyev, Ilya
AU - Zavarin, Eugene
AU - Lundin, Wsevolod
AU - Nechaev, Dmitrii
AU - Jmerik, Valentin
AU - Smirnov, Mikhail
AU - Pristovsek, Markus
AU - Shubina, Tatiana
N1 - Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/9/14
Y1 - 2021/9/14
N2 - We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural charac-teristics of short-period GaN/AlN SLs using Raman spectroscopy.
AB - We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural charac-teristics of short-period GaN/AlN SLs using Raman spectroscopy.
KW - Density functional theory
KW - GaN/AlN superlattices
KW - Group theory analysis
KW - Interface diffusion
KW - Lattice dynamics
KW - Metal-organic vapor phase epitaxy
KW - Molecular beam epitaxy
KW - Raman spectroscopy
KW - Random-element isodisplacement model
KW - molecular beam epitaxy
KW - LATTICE-DYNAMICS
KW - DISPERSION
KW - interface diffusion
KW - ROUGHNESS
KW - metal-organic vapor phase epitaxy
KW - random-element isodisplacement model
KW - GaN
KW - AlN superlattices
KW - group theory analysis
KW - density functional theory
KW - lattice dynamics
KW - OPTICAL PHONONS
KW - ALN/GAN SUPERLATTICES
KW - SCATTERING
UR - http://www.scopus.com/inward/record.url?scp=85114771566&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/d8a30b31-c554-3618-8e94-a5667a459ff5/
U2 - 10.3390/nano11092396
DO - 10.3390/nano11092396
M3 - Article
AN - SCOPUS:85114771566
VL - 11
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 9
M1 - 2396
ER -
ID: 88796827