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The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices. / Davydov, Valery; Roginskii, Eugene; Kitaev, Yuri; Eliseyev, Ilya; Zavarin, Eugene; Lundin, Wsevolod; Nechaev, Dmitrii; Jmerik, Valentin; Smirnov, Mikhail; Pristovsek, Markus; Shubina, Tatiana.

In: Nanomaterials, Vol. 11, No. 9, 2396, 14.09.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Davydov, V, Roginskii, E, Kitaev, Y, Eliseyev, I, Zavarin, E, Lundin, W, Nechaev, D, Jmerik, V, Smirnov, M, Pristovsek, M & Shubina, T 2021, 'The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices', Nanomaterials, vol. 11, no. 9, 2396. https://doi.org/10.3390/nano11092396

APA

Davydov, V., Roginskii, E., Kitaev, Y., Eliseyev, I., Zavarin, E., Lundin, W., Nechaev, D., Jmerik, V., Smirnov, M., Pristovsek, M., & Shubina, T. (2021). The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices. Nanomaterials, 11(9), [2396]. https://doi.org/10.3390/nano11092396

Vancouver

Davydov V, Roginskii E, Kitaev Y, Eliseyev I, Zavarin E, Lundin W et al. The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices. Nanomaterials. 2021 Sep 14;11(9). 2396. https://doi.org/10.3390/nano11092396

Author

Davydov, Valery ; Roginskii, Eugene ; Kitaev, Yuri ; Eliseyev, Ilya ; Zavarin, Eugene ; Lundin, Wsevolod ; Nechaev, Dmitrii ; Jmerik, Valentin ; Smirnov, Mikhail ; Pristovsek, Markus ; Shubina, Tatiana. / The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices. In: Nanomaterials. 2021 ; Vol. 11, No. 9.

BibTeX

@article{4aa93f3dc61541439fc9c8000d978441,
title = "The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices",
abstract = "We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural charac-teristics of short-period GaN/AlN SLs using Raman spectroscopy.",
keywords = "Density functional theory, GaN/AlN superlattices, Group theory analysis, Interface diffusion, Lattice dynamics, Metal-organic vapor phase epitaxy, Molecular beam epitaxy, Raman spectroscopy, Random-element isodisplacement model, molecular beam epitaxy, LATTICE-DYNAMICS, DISPERSION, interface diffusion, ROUGHNESS, metal-organic vapor phase epitaxy, random-element isodisplacement model, GaN, AlN superlattices, group theory analysis, density functional theory, lattice dynamics, OPTICAL PHONONS, ALN/GAN SUPERLATTICES, SCATTERING",
author = "Valery Davydov and Eugene Roginskii and Yuri Kitaev and Ilya Eliseyev and Eugene Zavarin and Wsevolod Lundin and Dmitrii Nechaev and Valentin Jmerik and Mikhail Smirnov and Markus Pristovsek and Tatiana Shubina",
note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2021",
month = sep,
day = "14",
doi = "10.3390/nano11092396",
language = "English",
volume = "11",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "9",

}

RIS

TY - JOUR

T1 - The effect of interface diffusion on raman spectra of wurtzite short-period gan/aln superlattices

AU - Davydov, Valery

AU - Roginskii, Eugene

AU - Kitaev, Yuri

AU - Eliseyev, Ilya

AU - Zavarin, Eugene

AU - Lundin, Wsevolod

AU - Nechaev, Dmitrii

AU - Jmerik, Valentin

AU - Smirnov, Mikhail

AU - Pristovsek, Markus

AU - Shubina, Tatiana

N1 - Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/9/14

Y1 - 2021/9/14

N2 - We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural charac-teristics of short-period GaN/AlN SLs using Raman spectroscopy.

AB - We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural charac-teristics of short-period GaN/AlN SLs using Raman spectroscopy.

KW - Density functional theory

KW - GaN/AlN superlattices

KW - Group theory analysis

KW - Interface diffusion

KW - Lattice dynamics

KW - Metal-organic vapor phase epitaxy

KW - Molecular beam epitaxy

KW - Raman spectroscopy

KW - Random-element isodisplacement model

KW - molecular beam epitaxy

KW - LATTICE-DYNAMICS

KW - DISPERSION

KW - interface diffusion

KW - ROUGHNESS

KW - metal-organic vapor phase epitaxy

KW - random-element isodisplacement model

KW - GaN

KW - AlN superlattices

KW - group theory analysis

KW - density functional theory

KW - lattice dynamics

KW - OPTICAL PHONONS

KW - ALN/GAN SUPERLATTICES

KW - SCATTERING

UR - http://www.scopus.com/inward/record.url?scp=85114771566&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/d8a30b31-c554-3618-8e94-a5667a459ff5/

U2 - 10.3390/nano11092396

DO - 10.3390/nano11092396

M3 - Article

AN - SCOPUS:85114771566

VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 9

M1 - 2396

ER -

ID: 88796827