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The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon. / Lisachenko, A. A.; Aprelev, A. M.

In: Technical Physics Letters, Vol. 27, No. 2, 01.02.2001, p. 134-137.

Research output: Contribution to journal › Article › peer-review

Harvard

Lisachenko, AA & Aprelev, AM 2001, 'The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon', Technical Physics Letters, vol. 27, no. 2, pp. 134-137. https://doi.org/10.1134/1.1352772

APA

Lisachenko, A. A., & Aprelev, A. M. (2001). The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon. Technical Physics Letters, 27(2), 134-137. https://doi.org/10.1134/1.1352772

Vancouver

Lisachenko AA, Aprelev AM. The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon. Technical Physics Letters. 2001 Feb 1;27(2):134-137. https://doi.org/10.1134/1.1352772

Author

Lisachenko, A. A. ; Aprelev, A. M. / The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon. In: Technical Physics Letters. 2001 ; Vol. 27, No. 2. pp. 134-137.

BibTeX

@article{9123818b1fc444ba88d57a9660a7eecd,
title = "The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon",
abstract = "Effects of the surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) were studied by methods of photoluminescence spectroscopy, UV photoelectron spectroscopy, and Fourier-transform IR spectroscopy. An analysis of evolution of the por-Si characteristics in the course of thermal treatment in vacuum revealed a correlation between the photoluminescence spectrum and intensity, on the one hand, and the electron spectrum and surface atomic structure, on the other hand. The thermodesorption of adsorbate from por-Si leads to atomic rearrangements on the sample surface, which is accompanied by changes in the electron structure and, hence, in the luminescent properties of the material.",
author = "Lisachenko, {A. A.} and Aprelev, {A. M.}",
year = "2001",
month = feb,
day = "1",
doi = "10.1134/1.1352772",
language = "English",
volume = "27",
pages = "134--137",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon

AU - Lisachenko, A. A.

AU - Aprelev, A. M.

PY - 2001/2/1

Y1 - 2001/2/1

N2 - Effects of the surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) were studied by methods of photoluminescence spectroscopy, UV photoelectron spectroscopy, and Fourier-transform IR spectroscopy. An analysis of evolution of the por-Si characteristics in the course of thermal treatment in vacuum revealed a correlation between the photoluminescence spectrum and intensity, on the one hand, and the electron spectrum and surface atomic structure, on the other hand. The thermodesorption of adsorbate from por-Si leads to atomic rearrangements on the sample surface, which is accompanied by changes in the electron structure and, hence, in the luminescent properties of the material.

AB - Effects of the surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) were studied by methods of photoluminescence spectroscopy, UV photoelectron spectroscopy, and Fourier-transform IR spectroscopy. An analysis of evolution of the por-Si characteristics in the course of thermal treatment in vacuum revealed a correlation between the photoluminescence spectrum and intensity, on the one hand, and the electron spectrum and surface atomic structure, on the other hand. The thermodesorption of adsorbate from por-Si leads to atomic rearrangements on the sample surface, which is accompanied by changes in the electron structure and, hence, in the luminescent properties of the material.

UR - http://www.scopus.com/inward/record.url?scp=0035530373&partnerID=8YFLogxK

U2 - 10.1134/1.1352772

DO - 10.1134/1.1352772

M3 - Article

AN - SCOPUS:0035530373

VL - 27

SP - 134

EP - 137

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 43495391