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The characteristics of semiconductor-to-metal transition in VO2 of different morphology. / Petukhova, Yu.V.; Osmolowskaya, O.M.; Osmolowsky, M.G.

In: Journal of Physics: Conference Series, Vol. 643, No. 1, 2015, p. 012121.

Research output: Contribution to journal › Article › peer-review

Harvard

Petukhova, YV, Osmolowskaya, OM & Osmolowsky, MG 2015, 'The characteristics of semiconductor-to-metal transition in VO2 of different morphology', Journal of Physics: Conference Series, vol. 643, no. 1, pp. 012121.

APA

Petukhova, Y. V., Osmolowskaya, O. M., & Osmolowsky, M. G. (2015). The characteristics of semiconductor-to-metal transition in VO2 of different morphology. Journal of Physics: Conference Series, 643(1), 012121.

Vancouver

Petukhova YV, Osmolowskaya OM, Osmolowsky MG. The characteristics of semiconductor-to-metal transition in VO2 of different morphology. Journal of Physics: Conference Series. 2015;643(1):012121.

Author

Petukhova, Yu.V. ; Osmolowskaya, O.M. ; Osmolowsky, M.G. / The characteristics of semiconductor-to-metal transition in VO2 of different morphology. In: Journal of Physics: Conference Series. 2015 ; Vol. 643, No. 1. pp. 012121.

BibTeX

@article{89b79ecef43947c897e36b83a7a3ad6f,
title = "The characteristics of semiconductor-to-metal transition in VO2 of different morphology",
author = "Yu.V. Petukhova and O.M. Osmolowskaya and M.G. Osmolowsky",
year = "2015",
language = "English",
volume = "643",
pages = "012121",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - The characteristics of semiconductor-to-metal transition in VO2 of different morphology

AU - Petukhova, Yu.V.

AU - Osmolowskaya, O.M.

AU - Osmolowsky, M.G.

PY - 2015

Y1 - 2015

M3 - Article

VL - 643

SP - 012121

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

ER -

ID: 5834665