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Temperature Dependence of Luminescence Intensity of CdTe/Cd0.6Mg0.4Te Heterostructure under Above-Barrier Excitation. / Агекян, Вадим Фадеевич; Лабзовская, Марьяна Эдуардовна; Серов, Алексей Юрьевич; Философов, Николай Глебович; Карчевский, Гжегош.

In: OPTICS AND SPECTROSCOPY, Vol. 133, No. 7, 2025, p. 738-741.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Агекян, ВФ, Лабзовская, МЭ, Серов, АЮ, Философов, НГ & Карчевский, Г 2025, 'Temperature Dependence of Luminescence Intensity of CdTe/Cd0.6Mg0.4Te Heterostructure under Above-Barrier Excitation', OPTICS AND SPECTROSCOPY, vol. 133, no. 7, pp. 738-741. https://doi.org/10.61011/EOS.2025.07.61908.7888-25

APA

Агекян, В. Ф., Лабзовская, М. Э., Серов, А. Ю., Философов, Н. Г., & Карчевский, Г. (2025). Temperature Dependence of Luminescence Intensity of CdTe/Cd0.6Mg0.4Te Heterostructure under Above-Barrier Excitation. OPTICS AND SPECTROSCOPY, 133(7), 738-741. https://doi.org/10.61011/EOS.2025.07.61908.7888-25

Vancouver

Агекян ВФ, Лабзовская МЭ, Серов АЮ, Философов НГ, Карчевский Г. Temperature Dependence of Luminescence Intensity of CdTe/Cd0.6Mg0.4Te Heterostructure under Above-Barrier Excitation. OPTICS AND SPECTROSCOPY. 2025;133(7):738-741. https://doi.org/10.61011/EOS.2025.07.61908.7888-25

Author

Агекян, Вадим Фадеевич ; Лабзовская, Марьяна Эдуардовна ; Серов, Алексей Юрьевич ; Философов, Николай Глебович ; Карчевский, Гжегош. / Temperature Dependence of Luminescence Intensity of CdTe/Cd0.6Mg0.4Te Heterostructure under Above-Barrier Excitation. In: OPTICS AND SPECTROSCOPY. 2025 ; Vol. 133, No. 7. pp. 738-741.

BibTeX

@article{a84a182530b14a0d87bed502d4aad260,
title = "Temperature Dependence of Luminescence Intensity of CdTe/Cd0.6Mg0.4Te Heterostructure under Above-Barrier Excitation",
abstract = "The temperature dependence of the luminescence of a CdTe/Cd0.6Mg0.4Te quantum well (QW) was investigated in the temperature range 5-200 K. It was found that under under-barrier excitation this dependence is characterized by two nonradiative recombination channels with activation energies of 0.01 and 0.037 eV. Under above-barrier excitation, a feature appears in the temperature dependence of the QW luminescence intensity, associated with exciton delocalization in the Cd0.6Mg0.4Te barrier. Nonradiative recombination in the barrier is characterized by two activation energies: 0.0065 and 0.046 eV. A model is proposed that describes the temperature effect on the luminescence intensity of the QW and barrier, taking into account exciton delocalization in the barrier and their trapping at nonradiative recombination centers. Keywords: II-VI semiconductors, heterostructures, quantum wells, luminescence, excitation transfer.",
keywords = "II−VI semiconductors, heterostructures, quantum wells, luminescence, excitation transfer",
author = "Агекян, {Вадим Фадеевич} and Лабзовская, {Марьяна Эдуардовна} and Серов, {Алексей Юрьевич} and Философов, {Николай Глебович} and Гжегош Карчевский",
year = "2025",
doi = "10.61011/EOS.2025.07.61908.7888-25",
language = "English",
volume = "133",
pages = "738--741",
journal = "OPTICS AND SPECTROSCOPY",
issn = "0030-400X",
publisher = "Pleiades Publishing",
number = "7",

}

RIS

TY - JOUR

T1 - Temperature Dependence of Luminescence Intensity of CdTe/Cd0.6Mg0.4Te Heterostructure under Above-Barrier Excitation

AU - Агекян, Вадим Фадеевич

AU - Лабзовская, Марьяна Эдуардовна

AU - Серов, Алексей Юрьевич

AU - Философов, Николай Глебович

AU - Карчевский, Гжегош

PY - 2025

Y1 - 2025

N2 - The temperature dependence of the luminescence of a CdTe/Cd0.6Mg0.4Te quantum well (QW) was investigated in the temperature range 5-200 K. It was found that under under-barrier excitation this dependence is characterized by two nonradiative recombination channels with activation energies of 0.01 and 0.037 eV. Under above-barrier excitation, a feature appears in the temperature dependence of the QW luminescence intensity, associated with exciton delocalization in the Cd0.6Mg0.4Te barrier. Nonradiative recombination in the barrier is characterized by two activation energies: 0.0065 and 0.046 eV. A model is proposed that describes the temperature effect on the luminescence intensity of the QW and barrier, taking into account exciton delocalization in the barrier and their trapping at nonradiative recombination centers. Keywords: II-VI semiconductors, heterostructures, quantum wells, luminescence, excitation transfer.

AB - The temperature dependence of the luminescence of a CdTe/Cd0.6Mg0.4Te quantum well (QW) was investigated in the temperature range 5-200 K. It was found that under under-barrier excitation this dependence is characterized by two nonradiative recombination channels with activation energies of 0.01 and 0.037 eV. Under above-barrier excitation, a feature appears in the temperature dependence of the QW luminescence intensity, associated with exciton delocalization in the Cd0.6Mg0.4Te barrier. Nonradiative recombination in the barrier is characterized by two activation energies: 0.0065 and 0.046 eV. A model is proposed that describes the temperature effect on the luminescence intensity of the QW and barrier, taking into account exciton delocalization in the barrier and their trapping at nonradiative recombination centers. Keywords: II-VI semiconductors, heterostructures, quantum wells, luminescence, excitation transfer.

KW - II−VI semiconductors

KW - heterostructures

KW - quantum wells

KW - luminescence

KW - excitation transfer

U2 - 10.61011/EOS.2025.07.61908.7888-25

DO - 10.61011/EOS.2025.07.61908.7888-25

M3 - Conference article

VL - 133

SP - 738

EP - 741

JO - OPTICS AND SPECTROSCOPY

JF - OPTICS AND SPECTROSCOPY

SN - 0030-400X

IS - 7

ER -

ID: 145193049