Standard

Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates. / Fedorov, Vladimir V.; Berdnikov, Yury; Sibirev, Nickolay V.; Bolshakov, Alexey D.; Fedina, Sergey V.; Sapunov, Georgiy A.; Dvoretckaia, Liliia N.; Cirlin, George; Kirilenko, Demid A.; Tchernycheva, Maria; Mukhin, Ivan S.

In: Nanomaterials, Vol. 11, No. 8, 1949, 08.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Fedorov, VV, Berdnikov, Y, Sibirev, NV, Bolshakov, AD, Fedina, SV, Sapunov, GA, Dvoretckaia, LN, Cirlin, G, Kirilenko, DA, Tchernycheva, M & Mukhin, IS 2021, 'Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates', Nanomaterials, vol. 11, no. 8, 1949. https://doi.org/10.3390/nano11081949

APA

Fedorov, V. V., Berdnikov, Y., Sibirev, N. V., Bolshakov, A. D., Fedina, S. V., Sapunov, G. A., Dvoretckaia, L. N., Cirlin, G., Kirilenko, D. A., Tchernycheva, M., & Mukhin, I. S. (2021). Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates. Nanomaterials, 11(8), [1949]. https://doi.org/10.3390/nano11081949

Vancouver

Fedorov VV, Berdnikov Y, Sibirev NV, Bolshakov AD, Fedina SV, Sapunov GA et al. Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates. Nanomaterials. 2021 Aug;11(8). 1949. https://doi.org/10.3390/nano11081949

Author

Fedorov, Vladimir V. ; Berdnikov, Yury ; Sibirev, Nickolay V. ; Bolshakov, Alexey D. ; Fedina, Sergey V. ; Sapunov, Georgiy A. ; Dvoretckaia, Liliia N. ; Cirlin, George ; Kirilenko, Demid A. ; Tchernycheva, Maria ; Mukhin, Ivan S. / Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates. In: Nanomaterials. 2021 ; Vol. 11, No. 8.

BibTeX

@article{690ca936cefe4523b4addf6fe2f7100a,
title = "Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates",
abstract = "Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in singleor two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.",
keywords = "GaP, Molecular beam epitaxy, Nanowires, Two-stage growth, molecular beam epitaxy, EVOLUTION, nanowires, SILICON, GROWTH, two-stage growth",
author = "Fedorov, {Vladimir V.} and Yury Berdnikov and Sibirev, {Nickolay V.} and Bolshakov, {Alexey D.} and Fedina, {Sergey V.} and Sapunov, {Georgiy A.} and Dvoretckaia, {Liliia N.} and George Cirlin and Kirilenko, {Demid A.} and Maria Tchernycheva and Mukhin, {Ivan S.}",
note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2021",
month = aug,
doi = "10.3390/nano11081949",
language = "English",
volume = "11",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "8",

}

RIS

TY - JOUR

T1 - Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates

AU - Fedorov, Vladimir V.

AU - Berdnikov, Yury

AU - Sibirev, Nickolay V.

AU - Bolshakov, Alexey D.

AU - Fedina, Sergey V.

AU - Sapunov, Georgiy A.

AU - Dvoretckaia, Liliia N.

AU - Cirlin, George

AU - Kirilenko, Demid A.

AU - Tchernycheva, Maria

AU - Mukhin, Ivan S.

N1 - Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/8

Y1 - 2021/8

N2 - Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in singleor two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

AB - Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in singleor two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

KW - GaP

KW - Molecular beam epitaxy

KW - Nanowires

KW - Two-stage growth

KW - molecular beam epitaxy

KW - EVOLUTION

KW - nanowires

KW - SILICON

KW - GROWTH

KW - two-stage growth

UR - http://www.scopus.com/inward/record.url?scp=85111326026&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/a9390d81-5cd0-36c8-bd7d-12cc4831ba44/

U2 - 10.3390/nano11081949

DO - 10.3390/nano11081949

M3 - Article

AN - SCOPUS:85111326026

VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 8

M1 - 1949

ER -

ID: 88772674