Sub-Poissonian length distributions of vapor-liquid-solid nanowires induced by nucleation antibunching. / Dubrovskii, V. G.; Sibirev, N. V.
In: Journal Physics D: Applied Physics, Vol. 50, No. 25, 254004, 28.06.2017.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Sub-Poissonian length distributions of vapor-liquid-solid nanowires induced by nucleation antibunching
AU - Dubrovskii, V. G.
AU - Sibirev, N. V.
PY - 2017/6/28
Y1 - 2017/6/28
N2 - Herein, we present an analytic length distribution of vapor-liquid-solid nanowires growing without the nucleation delays of the very first monolayer, by the direct impingement of material from vapor, and in the absence of desorption. We show that nucleation antibunching narrows the Poissonian length distribution to a time-independent asymptotic shape. The obtained distribution depends on the sole control parameter epsilon describing the effect of antibunching, and has a variance of 1/(2 epsilon) rather than spreading infinitely with time. A good agreement is found between the analytic shapes obtained within the continuum growth theory and Green's function of the discrete rate equations describing the length statistics of nanowires. Overall, this narrowing effect can be used to improve the size homogeneity of III-V and other semiconductor nanowires grown under the appropriate conditions.
AB - Herein, we present an analytic length distribution of vapor-liquid-solid nanowires growing without the nucleation delays of the very first monolayer, by the direct impingement of material from vapor, and in the absence of desorption. We show that nucleation antibunching narrows the Poissonian length distribution to a time-independent asymptotic shape. The obtained distribution depends on the sole control parameter epsilon describing the effect of antibunching, and has a variance of 1/(2 epsilon) rather than spreading infinitely with time. A good agreement is found between the analytic shapes obtained within the continuum growth theory and Green's function of the discrete rate equations describing the length statistics of nanowires. Overall, this narrowing effect can be used to improve the size homogeneity of III-V and other semiconductor nanowires grown under the appropriate conditions.
KW - vapor-liquid-solid nanowires
KW - nucleation antibunching
KW - length distribution
KW - narrowing effect
KW - SURFACE-DIFFUSION
KW - GAAS NANOWIRES
KW - GROWTH
U2 - 10.1088/1361-6463/aa6fbb
DO - 10.1088/1361-6463/aa6fbb
M3 - статья
VL - 50
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 25
M1 - 254004
ER -
ID: 11782707