Study of wurtzite crystal phase stabilization in heterostructured Ga(As,P) nanowires

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Study of wurtzite crystal phase stabilization in heterostructured Ga(As,P) nanowires. / Sibirev, N. V. ; Fedorov, V. V. ; Kirilenko, D. A. ; Ubiyvovk, E. V. ; Berdnikov, Y. S. ; Bolshakov, A. D. ; Mukhin, I. S. .

In: Semiconductors, Vol. 54, No. 13, 2020, p. 1862-1865.

Research output: Contribution to journal › Conference article › peer-review

Author

Sibirev, N. V. ; Fedorov, V. V. ; Kirilenko, D. A. ; Ubiyvovk, E. V. ; Berdnikov, Y. S. ; Bolshakov, A. D. ; Mukhin, I. S. . / Study of wurtzite crystal phase stabilization in heterostructured Ga(As,P) nanowires. In: Semiconductors. 2020 ; Vol. 54, No. 13. pp. 1862-1865.

BibTeX

@article{70292635dd9e4a0cbb40970929dc916d,

title = "Study of wurtzite crystal phase stabilization in heterostructured Ga(As,P) nanowires",

abstract = "GaP as well as GaAs has face-centered cubic crystal phase at standard conditions. Despite it, GaP and GaAs nanowires frequently grow in a metastable hexagonal crystal phase called wurtzite. In this work, stable growth of GaP nanowire in the metastable phase is explained by accounting the elastic strain in the nucleus of a new layer. Crystal phase switch in heterostructured Ga(As,P) nanowire caused by heterointerface was studied theoretically and experimentally. Length of wurtzite segment after the switch of crystal phase linearly increases with nanowire diameter. Such dependence can not be explained by only kinetically driven effects. We consider such dependence as an evidence of elastic strain stabilization of the metastable phase in nanowires.",

keywords = "nanowire, gallium phosphide, wurtzite, polytypes",

author = "Sibirev, {N. V.} and Fedorov, {V. V.} and Kirilenko, {D. A.} and Ubiyvovk, {E. V.} and Berdnikov, {Y. S.} and Bolshakov, {A. D.} and Mukhin, {I. S.}",

note = "Sibirev, N.V., Fedorov, V.V., Kirilenko, D.A. et al. Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires. Semiconductors 54, 1862–1865 (2020). https://doi.org/10.1134/S1063782620140286",

year = "2020",

language = "English",

volume = "54",

pages = "1862--1865",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "13",

}

RIS

TY - JOUR

T1 - Study of wurtzite crystal phase stabilization in heterostructured Ga(As,P) nanowires

AU - Sibirev, N. V.

AU - Fedorov, V. V.

AU - Kirilenko, D. A.

AU - Ubiyvovk, E. V.

AU - Berdnikov, Y. S.

AU - Bolshakov, A. D.

AU - Mukhin, I. S.

N1 - Sibirev, N.V., Fedorov, V.V., Kirilenko, D.A. et al. Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires. Semiconductors 54, 1862–1865 (2020). https://doi.org/10.1134/S1063782620140286

PY - 2020

Y1 - 2020

N2 - GaP as well as GaAs has face-centered cubic crystal phase at standard conditions. Despite it, GaP and GaAs nanowires frequently grow in a metastable hexagonal crystal phase called wurtzite. In this work, stable growth of GaP nanowire in the metastable phase is explained by accounting the elastic strain in the nucleus of a new layer. Crystal phase switch in heterostructured Ga(As,P) nanowire caused by heterointerface was studied theoretically and experimentally. Length of wurtzite segment after the switch of crystal phase linearly increases with nanowire diameter. Such dependence can not be explained by only kinetically driven effects. We consider such dependence as an evidence of elastic strain stabilization of the metastable phase in nanowires.

AB - GaP as well as GaAs has face-centered cubic crystal phase at standard conditions. Despite it, GaP and GaAs nanowires frequently grow in a metastable hexagonal crystal phase called wurtzite. In this work, stable growth of GaP nanowire in the metastable phase is explained by accounting the elastic strain in the nucleus of a new layer. Crystal phase switch in heterostructured Ga(As,P) nanowire caused by heterointerface was studied theoretically and experimentally. Length of wurtzite segment after the switch of crystal phase linearly increases with nanowire diameter. Such dependence can not be explained by only kinetically driven effects. We consider such dependence as an evidence of elastic strain stabilization of the metastable phase in nanowires.

KW - nanowire

KW - gallium phosphide

KW - wurtzite

KW - polytypes

UR - https://link.springer.com/article/10.1134%2FS1063782620140286

M3 - Conference article

VL - 54

SP - 1862

EP - 1865

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 13

ER -

ID: 70925047