Research output: Contribution to journal › Article › peer-review
Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon. / Koval, Olga Yu.; Fedorov, Vladimir E.; Kryzhanovskaya, Natalia V.; Sapunov, Georgiy A.; Kirilenko, Demid A.; Pirogov, Evgeniy V.; Filosofov, Nikolay G.; Serov, Aleksei Yu.; Shtrom, Igor V.; Bolshakov, Alexey D.; Mukhin, Ivan S.
In: CrystEngComm, Vol. 22, No. 2, 14.01.2020, p. 283-292.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon
AU - Koval, Olga Yu.
AU - Fedorov, Vladimir E.
AU - Kryzhanovskaya, Natalia V.
AU - Sapunov, Georgiy A.
AU - Kirilenko, Demid A.
AU - Pirogov, Evgeniy V.
AU - Filosofov, Nikolay G.
AU - Serov, Aleksei Yu.
AU - Shtrom, Igor V.
AU - Bolshakov, Alexey D.
AU - Mukhin, Ivan S.
PY - 2020/1/14
Y1 - 2020/1/14
N2 - III-V/Si integration is one of the bottlenecks of modern semiconductor technology. Dilute nitride phosphides (III-P-N) are among the promising materials providing lattice matching with Si. In this work, we study the effect of growth conditions on the chemical composition and properties of GaP1-xNx/GaP/Si planar heterostructures synthesized by plasma assisted molecular beam epitaxy. A series of samples with a maximum fraction of incorporated nitrogen as high as 5.05% is synthesized. The morphological, structural and optical properties of the heterostructures are studied. The tendency towards 3D growth and microtwinning in dilute nitride layers are demonstrated with the increase of nitrogen content. The most intense room temperature (RT) red photoluminescence (PL) emission is obtained with the sample containing 3.07% N. The PL intensity is found to be dependent on the N growth flux while its content only slightly changes with the flux. A low temperature PL study demonstrates efficient donor-acceptor recombination in the synthesized samples. Despite low structural perfection, the sample with the highest nitrogen content demonstrates PL response at RT centered at 1.76 eV.
AB - III-V/Si integration is one of the bottlenecks of modern semiconductor technology. Dilute nitride phosphides (III-P-N) are among the promising materials providing lattice matching with Si. In this work, we study the effect of growth conditions on the chemical composition and properties of GaP1-xNx/GaP/Si planar heterostructures synthesized by plasma assisted molecular beam epitaxy. A series of samples with a maximum fraction of incorporated nitrogen as high as 5.05% is synthesized. The morphological, structural and optical properties of the heterostructures are studied. The tendency towards 3D growth and microtwinning in dilute nitride layers are demonstrated with the increase of nitrogen content. The most intense room temperature (RT) red photoluminescence (PL) emission is obtained with the sample containing 3.07% N. The PL intensity is found to be dependent on the N growth flux while its content only slightly changes with the flux. A low temperature PL study demonstrates efficient donor-acceptor recombination in the synthesized samples. Despite low structural perfection, the sample with the highest nitrogen content demonstrates PL response at RT centered at 1.76 eV.
KW - BAND-GAP
KW - ENERGY-GAP
KW - TEMPERATURE-DEPENDENCE
KW - EPITAXIAL-GROWTH
KW - BEAM EPITAXY
KW - SI
KW - GALLIUM
KW - GANAS
KW - SIMULATION
KW - BEHAVIOR
UR - http://www.scopus.com/inward/record.url?scp=85077343631&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/b4f3d5f4-8ae1-3a2b-b061-fb27e7962b89/
U2 - 10.1039/c9ce01498e
DO - 10.1039/c9ce01498e
M3 - Article
AN - SCOPUS:85077343631
VL - 22
SP - 283
EP - 292
JO - CrystEngComm
JF - CrystEngComm
SN - 1466-8033
IS - 2
ER -
ID: 50836551