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Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells. / Griesbeck, M.; Glazov, M. M.; Sherman, E. Ya; Schuh, D.; Wegscheider, W.; Schüller, C.; Korn, T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 85, No. 8, 085313, 27.02.2012.

Research output: Contribution to journal › Article › peer-review

Harvard

Griesbeck, M, Glazov, MM, Sherman, EY, Schuh, D, Wegscheider, W, Schüller, C & Korn, T 2012, 'Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells', Physical Review B - Condensed Matter and Materials Physics, vol. 85, no. 8, 085313. https://doi.org/10.1103/PhysRevB.85.085313

APA

Griesbeck, M., Glazov, M. M., Sherman, E. Y., Schuh, D., Wegscheider, W., Schüller, C., & Korn, T. (2012). Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells. Physical Review B - Condensed Matter and Materials Physics, 85(8), [085313]. https://doi.org/10.1103/PhysRevB.85.085313

Vancouver

Griesbeck M, Glazov MM, Sherman EY, Schuh D, Wegscheider W, Schüller C et al. Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells. Physical Review B - Condensed Matter and Materials Physics. 2012 Feb 27;85(8). 085313. https://doi.org/10.1103/PhysRevB.85.085313

Author

Griesbeck, M. ; Glazov, M. M. ; Sherman, E. Ya ; Schuh, D. ; Wegscheider, W. ; Schüller, C. ; Korn, T. / Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells. In: Physical Review B - Condensed Matter and Materials Physics. 2012 ; Vol. 85, No. 8.

BibTeX

@article{0d442e5920b74f01ae7beda72211769c,
title = "Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells",
abstract = "We have studied spin dephasing in a high-mobility two-dimensional electron system confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDTs) for electron spins aligned along the growth direction or within the sample plane, as well as the g factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed. The SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.",
author = "M. Griesbeck and Glazov, {M. M.} and Sherman, {E. Ya} and D. Schuh and W. Wegscheider and C. Sch{\"u}ller and T. Korn",
year = "2012",
month = feb,
day = "27",
doi = "10.1103/PhysRevB.85.085313",
language = "English",
volume = "85",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "8",

}

RIS

TY - JOUR

T1 - Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

AU - Griesbeck, M.

AU - Glazov, M. M.

AU - Sherman, E. Ya

AU - Schuh, D.

AU - Wegscheider, W.

AU - Schüller, C.

AU - Korn, T.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - We have studied spin dephasing in a high-mobility two-dimensional electron system confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDTs) for electron spins aligned along the growth direction or within the sample plane, as well as the g factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed. The SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.

AB - We have studied spin dephasing in a high-mobility two-dimensional electron system confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDTs) for electron spins aligned along the growth direction or within the sample plane, as well as the g factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed. The SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.

UR - http://www.scopus.com/inward/record.url?scp=84857699174&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.85.085313

DO - 10.1103/PhysRevB.85.085313

M3 - Article

AN - SCOPUS:84857699174

VL - 85

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 8

M1 - 085313

ER -

ID: 36374985