Stochastic Faraday rotation induced by the electric current fluctuations in nanosystems

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Stochastic Faraday rotation induced by the electric current fluctuations in nanosystems. / Smirnov, D. S.; Glazov, M. M.

In: Physical Review B, Vol. 95, No. 4, 045406, 04.01.2017.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{d825ec60708149e9a5cd82ff9f5622b6,

title = "Stochastic Faraday rotation induced by the electric current fluctuations in nanosystems",

abstract = "We demonstrate theoretically that in gyrotropic semiconductors and semiconductor nanosystems the Brownian motion of electrons results in temporal fluctuations of the polarization plane of light passing through or reflected from the structure, i.e., in stochastic Faraday or Kerr rotation effects. The theory of the effects is developed for a number of prominent gyrotropic systems such as bulk tellurium, ensembles of chiral carbon nanotubes, and GaAs-based quantum wells of different crystallographic orientations. We show that the power spectrum of these fluctuations in thermal equilibrium is proportional to the ac conductivity of the system. We evaluate contributions resulting from the fluctuations of the electric current, as well as of spin, valley polarization, and the spin current to the noise of the Faraday/Kerr rotation. Hence all-optical measurements of the Faraday and Kerr rotation noise provide an access to the transport properties of the semiconductor systems.",

author = "Smirnov, {D. S.} and Glazov, {M. M.}",

year = "2017",

month = jan,

day = "4",

doi = "10.1103/PhysRevB.95.045406",

language = "English",

volume = "95",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

RIS

TY - JOUR

T1 - Stochastic Faraday rotation induced by the electric current fluctuations in nanosystems

AU - Smirnov, D. S.

AU - Glazov, M. M.

PY - 2017/1/4

Y1 - 2017/1/4

N2 - We demonstrate theoretically that in gyrotropic semiconductors and semiconductor nanosystems the Brownian motion of electrons results in temporal fluctuations of the polarization plane of light passing through or reflected from the structure, i.e., in stochastic Faraday or Kerr rotation effects. The theory of the effects is developed for a number of prominent gyrotropic systems such as bulk tellurium, ensembles of chiral carbon nanotubes, and GaAs-based quantum wells of different crystallographic orientations. We show that the power spectrum of these fluctuations in thermal equilibrium is proportional to the ac conductivity of the system. We evaluate contributions resulting from the fluctuations of the electric current, as well as of spin, valley polarization, and the spin current to the noise of the Faraday/Kerr rotation. Hence all-optical measurements of the Faraday and Kerr rotation noise provide an access to the transport properties of the semiconductor systems.

AB - We demonstrate theoretically that in gyrotropic semiconductors and semiconductor nanosystems the Brownian motion of electrons results in temporal fluctuations of the polarization plane of light passing through or reflected from the structure, i.e., in stochastic Faraday or Kerr rotation effects. The theory of the effects is developed for a number of prominent gyrotropic systems such as bulk tellurium, ensembles of chiral carbon nanotubes, and GaAs-based quantum wells of different crystallographic orientations. We show that the power spectrum of these fluctuations in thermal equilibrium is proportional to the ac conductivity of the system. We evaluate contributions resulting from the fluctuations of the electric current, as well as of spin, valley polarization, and the spin current to the noise of the Faraday/Kerr rotation. Hence all-optical measurements of the Faraday and Kerr rotation noise provide an access to the transport properties of the semiconductor systems.

UR - http://www.scopus.com/inward/record.url?scp=85010736793&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.95.045406

DO - 10.1103/PhysRevB.95.045406

M3 - Article

AN - SCOPUS:85010736793

VL - 95

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

M1 - 045406

ER -

ID: 36326161