We investigate the properties of excitons bound to single stacking faults in GaAs, finding an ultra-narrow photoluminescence linewidth and a giant built-in dipole moment.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
StatePublished - 16 Dec 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: 5 Jun 201610 Jun 2016

Conference

Conference2016 Conference on Lasers and Electro-Optics, CLEO 2016
Country/TerritoryUnited States
CitySan Jose
Period5/06/1610/06/16

    Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

ID: 36327849