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Spontaneous formation of arrays of three-dimensional islands in epitaxial layers. / Dubrovskii, V. G.; Cirlin, G.; Bauman, D. A.; Kozachek, V. V.; Mareev, V. V.

In: Technical Physics Letters, Vol. 24, No. 7, 07.1998, p. 507-509.

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Harvard

Dubrovskii, VG, Cirlin, G, Bauman, DA, Kozachek, VV & Mareev, VV 1998, 'Spontaneous formation of arrays of three-dimensional islands in epitaxial layers', Technical Physics Letters, vol. 24, no. 7, pp. 507-509. https://doi.org/10.1134/1.1262172

APA

Dubrovskii, V. G., Cirlin, G., Bauman, D. A., Kozachek, V. V., & Mareev, V. V. (1998). Spontaneous formation of arrays of three-dimensional islands in epitaxial layers. Technical Physics Letters, 24(7), 507-509. https://doi.org/10.1134/1.1262172

Vancouver

Author

Dubrovskii, V. G. ; Cirlin, G. ; Bauman, D. A. ; Kozachek, V. V. ; Mareev, V. V. / Spontaneous formation of arrays of three-dimensional islands in epitaxial layers. In: Technical Physics Letters. 1998 ; Vol. 24, No. 7. pp. 507-509.

BibTeX

@article{abb82d032e6240d99b7d421a8f6c1c42,
title = "Spontaneous formation of arrays of three-dimensional islands in epitaxial layers",
abstract = "An analysis is made of a theoretical model of the formation of three-dimensional nanometer-size islands in molecular beam epitaxy. The kinetics of the self-organization processes are described using a lattice gas model of the adsorbate with self-consistent allowance for lateral interactions in the activation energies of the diffusion processes. It is shown that at below-critical temperatures in a certain range of thicknesses, decay of the spatially uniform state gives rise to arrays of three-dimensional nano-islands which do not participate in the coalescence process after growth has ceased. The average size of the islands, their geometric profile, and the spatial ordering depend strongly on the kinetic parameters of the model.",
author = "Dubrovskii, {V. G.} and G. Cirlin and Bauman, {D. A.} and Kozachek, {V. V.} and Mareev, {V. V.}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "1998",
month = jul,
doi = "10.1134/1.1262172",
language = "English",
volume = "24",
pages = "507--509",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "7",

}

RIS

TY - JOUR

T1 - Spontaneous formation of arrays of three-dimensional islands in epitaxial layers

AU - Dubrovskii, V. G.

AU - Cirlin, G.

AU - Bauman, D. A.

AU - Kozachek, V. V.

AU - Mareev, V. V.

N1 - Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 1998/7

Y1 - 1998/7

N2 - An analysis is made of a theoretical model of the formation of three-dimensional nanometer-size islands in molecular beam epitaxy. The kinetics of the self-organization processes are described using a lattice gas model of the adsorbate with self-consistent allowance for lateral interactions in the activation energies of the diffusion processes. It is shown that at below-critical temperatures in a certain range of thicknesses, decay of the spatially uniform state gives rise to arrays of three-dimensional nano-islands which do not participate in the coalescence process after growth has ceased. The average size of the islands, their geometric profile, and the spatial ordering depend strongly on the kinetic parameters of the model.

AB - An analysis is made of a theoretical model of the formation of three-dimensional nanometer-size islands in molecular beam epitaxy. The kinetics of the self-organization processes are described using a lattice gas model of the adsorbate with self-consistent allowance for lateral interactions in the activation energies of the diffusion processes. It is shown that at below-critical temperatures in a certain range of thicknesses, decay of the spatially uniform state gives rise to arrays of three-dimensional nano-islands which do not participate in the coalescence process after growth has ceased. The average size of the islands, their geometric profile, and the spatial ordering depend strongly on the kinetic parameters of the model.

UR - http://www.scopus.com/inward/record.url?scp=0032352433&partnerID=8YFLogxK

U2 - 10.1134/1.1262172

DO - 10.1134/1.1262172

M3 - Article

AN - SCOPUS:0032352433

VL - 24

SP - 507

EP - 509

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 7

ER -

ID: 74831691