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Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers Mo xW1–xSe2/WSe2. / Liubomirov, A. D.; Kravtsov, V.; Cherbunin, R. V.

In: Semiconductors, Vol. 54, No. 11, 01.11.2020, p. 1518-1521.

Research output: Contribution to journal › Article › peer-review

Harvard

Liubomirov, AD, Kravtsov, V & Cherbunin, RV 2020, 'Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers Mo xW1–xSe2/WSe2', Semiconductors, vol. 54, no. 11, pp. 1518-1521. https://doi.org/10.1134/S1063782620110196

APA

Liubomirov, A. D., Kravtsov, V., & Cherbunin, R. V. (2020). Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers Mo xW1–xSe2/WSe2. Semiconductors, 54(11), 1518-1521. https://doi.org/10.1134/S1063782620110196

Vancouver

Liubomirov AD, Kravtsov V, Cherbunin RV. Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers Mo xW1–xSe2/WSe2. Semiconductors. 2020 Nov 1;54(11):1518-1521. https://doi.org/10.1134/S1063782620110196

Author

Liubomirov, A. D. ; Kravtsov, V. ; Cherbunin, R. V. / Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers Mo xW1–xSe2/WSe2. In: Semiconductors. 2020 ; Vol. 54, No. 11. pp. 1518-1521.

BibTeX

@article{8464342fbb5041be8b64feab31a94088,
title = "Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers Mo xW1–xSe2/WSe2",
abstract = "Abstact: —We study spin-valley relaxation dynamics in two-dimensional MoxW1–xSe2/WSe2 heterobilayers with different relative Mo/W concentration x in the monolayer alloy. Three types of heterobilayers with x = 1.00, 0.50, 0.33 are studied in time-resolved Kerr rotation experiments for different wavelengths and temperatures. The spin-valley relaxation times are found to decrease from ~10 nanoseconds for x = 1.00 to ~50 ps for x = 0.33. The observed relaxation times are limited by the recombination of indirect excitons formed in the heterobilayers. Our results demonstrate that spin-valley relaxation in alloy-based van der Waals heterostructures can be controlled via their chemical composition.",
keywords = "heterobilayers, interlayer excitons, spin-valley relaxation, TMDC",
author = "Liubomirov, {A. D.} and V. Kravtsov and Cherbunin, {R. V.}",
note = "Funding Information: The authors acknowledge Saint-Petersburg State University for a research Grant no. 51125686 and the group of Prof. Alexander Tartakovskii for providing several TMD heterostructure samples. V.K. acknowledges funding from RFBR according to project no. 19-52-51010. Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = nov,
day = "1",
doi = "10.1134/S1063782620110196",
language = "English",
volume = "54",
pages = "1518--1521",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers Mo xW1–xSe2/WSe2

AU - Liubomirov, A. D.

AU - Kravtsov, V.

AU - Cherbunin, R. V.

N1 - Funding Information: The authors acknowledge Saint-Petersburg State University for a research Grant no. 51125686 and the group of Prof. Alexander Tartakovskii for providing several TMD heterostructure samples. V.K. acknowledges funding from RFBR according to project no. 19-52-51010. Publisher Copyright: © 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/11/1

Y1 - 2020/11/1

N2 - Abstact: —We study spin-valley relaxation dynamics in two-dimensional MoxW1–xSe2/WSe2 heterobilayers with different relative Mo/W concentration x in the monolayer alloy. Three types of heterobilayers with x = 1.00, 0.50, 0.33 are studied in time-resolved Kerr rotation experiments for different wavelengths and temperatures. The spin-valley relaxation times are found to decrease from ~10 nanoseconds for x = 1.00 to ~50 ps for x = 0.33. The observed relaxation times are limited by the recombination of indirect excitons formed in the heterobilayers. Our results demonstrate that spin-valley relaxation in alloy-based van der Waals heterostructures can be controlled via their chemical composition.

AB - Abstact: —We study spin-valley relaxation dynamics in two-dimensional MoxW1–xSe2/WSe2 heterobilayers with different relative Mo/W concentration x in the monolayer alloy. Three types of heterobilayers with x = 1.00, 0.50, 0.33 are studied in time-resolved Kerr rotation experiments for different wavelengths and temperatures. The spin-valley relaxation times are found to decrease from ~10 nanoseconds for x = 1.00 to ~50 ps for x = 0.33. The observed relaxation times are limited by the recombination of indirect excitons formed in the heterobilayers. Our results demonstrate that spin-valley relaxation in alloy-based van der Waals heterostructures can be controlled via their chemical composition.

KW - heterobilayers

KW - interlayer excitons

KW - spin-valley relaxation

KW - TMDC

UR - http://www.scopus.com/inward/record.url?scp=85094919411&partnerID=8YFLogxK

U2 - 10.1134/S1063782620110196

DO - 10.1134/S1063782620110196

M3 - Article

AN - SCOPUS:85094919411

VL - 54

SP - 1518

EP - 1521

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 70652076