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Spin-dependent resonant tunneling in symmetrical double-barrier structures. / Glazov, M. M.; Alekseev, P. S.; Odnoblyudov, M. A.; Chistyakov, V. M.; Tarasenko, S. A.; Yassievich, I. N.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 15, 155313, 14.12.2005.

Research output: Contribution to journal › Article › peer-review

Harvard

Glazov, MM, Alekseev, PS, Odnoblyudov, MA, Chistyakov, VM, Tarasenko, SA & Yassievich, IN 2005, 'Spin-dependent resonant tunneling in symmetrical double-barrier structures', Physical Review B - Condensed Matter and Materials Physics, vol. 71, no. 15, 155313. https://doi.org/10.1103/PhysRevB.71.155313

APA

Glazov, M. M., Alekseev, P. S., Odnoblyudov, M. A., Chistyakov, V. M., Tarasenko, S. A., & Yassievich, I. N. (2005). Spin-dependent resonant tunneling in symmetrical double-barrier structures. Physical Review B - Condensed Matter and Materials Physics, 71(15), [155313]. https://doi.org/10.1103/PhysRevB.71.155313

Vancouver

Glazov MM, Alekseev PS, Odnoblyudov MA, Chistyakov VM, Tarasenko SA, Yassievich IN. Spin-dependent resonant tunneling in symmetrical double-barrier structures. Physical Review B - Condensed Matter and Materials Physics. 2005 Dec 14;71(15). 155313. https://doi.org/10.1103/PhysRevB.71.155313

Author

Glazov, M. M. ; Alekseev, P. S. ; Odnoblyudov, M. A. ; Chistyakov, V. M. ; Tarasenko, S. A. ; Yassievich, I. N. / Spin-dependent resonant tunneling in symmetrical double-barrier structures. In: Physical Review B - Condensed Matter and Materials Physics. 2005 ; Vol. 71, No. 15.

BibTeX

@article{c2bfd896b96c484189b1087379c1b8b4,
title = "Spin-dependent resonant tunneling in symmetrical double-barrier structures",
abstract = "A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of noncentrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field and (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.",
author = "Glazov, {M. M.} and Alekseev, {P. S.} and Odnoblyudov, {M. A.} and Chistyakov, {V. M.} and Tarasenko, {S. A.} and Yassievich, {I. N.}",
year = "2005",
month = dec,
day = "14",
doi = "10.1103/PhysRevB.71.155313",
language = "English",
volume = "71",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "15",

}

RIS

TY - JOUR

T1 - Spin-dependent resonant tunneling in symmetrical double-barrier structures

AU - Glazov, M. M.

AU - Alekseev, P. S.

AU - Odnoblyudov, M. A.

AU - Chistyakov, V. M.

AU - Tarasenko, S. A.

AU - Yassievich, I. N.

PY - 2005/12/14

Y1 - 2005/12/14

N2 - A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of noncentrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field and (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.

AB - A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of noncentrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field and (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.

UR - http://www.scopus.com/inward/record.url?scp=28644448656&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.155313

DO - 10.1103/PhysRevB.71.155313

M3 - Article

AN - SCOPUS:28644448656

VL - 71

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 15

M1 - 155313

ER -

ID: 36659530