Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers

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Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers. / Glazov, M. M.; Badalyan, S. M.; Vignale, G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 3, 033305, 11.07.2011.

Research output: Contribution to journal › Article › peer-review

Author

Glazov, M. M. ; Badalyan, S. M. ; Vignale, G. / Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers. In: Physical Review B - Condensed Matter and Materials Physics. 2011 ; Vol. 84, No. 3.

BibTeX

@article{322e974f601340d4906fae1aa0e9ef5e,

title = "Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers",

abstract = "Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction that arises in each layer from the perpendicular component of the Coulomb electric field created by electron-density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a charge current is driven in the other. This effect is distinct symmetrywise from the spin-Hall drag. The spin current is not, in general, perpendicular to the drive current.",

author = "Glazov, {M. M.} and Badalyan, {S. M.} and G. Vignale",

year = "2011",

month = jul,

day = "11",

doi = "10.1103/PhysRevB.84.033305",

language = "English",

volume = "84",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "3",

}

RIS

TY - JOUR

T1 - Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers

AU - Glazov, M. M.

AU - Badalyan, S. M.

AU - Vignale, G.

PY - 2011/7/11

Y1 - 2011/7/11

N2 - Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction that arises in each layer from the perpendicular component of the Coulomb electric field created by electron-density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a charge current is driven in the other. This effect is distinct symmetrywise from the spin-Hall drag. The spin current is not, in general, perpendicular to the drive current.

AB - Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction that arises in each layer from the perpendicular component of the Coulomb electric field created by electron-density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a charge current is driven in the other. This effect is distinct symmetrywise from the spin-Hall drag. The spin current is not, in general, perpendicular to the drive current.

UR - http://www.scopus.com/inward/record.url?scp=79961211863&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.84.033305

DO - 10.1103/PhysRevB.84.033305

M3 - Article

AN - SCOPUS:79961211863

VL - 84

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 3

M1 - 033305

ER -

ID: 36443222