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Spin relaxation in multiple (110) quantum wells. / Glazov, M. M.; Sherman, E. Ya.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 11, 115332, 30.03.2010.

Research output: Contribution to journalArticlepeer-review

Harvard

Glazov, MM & Sherman, EY 2010, 'Spin relaxation in multiple (110) quantum wells', Physical Review B - Condensed Matter and Materials Physics, vol. 81, no. 11, 115332. https://doi.org/10.1103/PhysRevB.81.115332

APA

Glazov, M. M., & Sherman, E. Y. (2010). Spin relaxation in multiple (110) quantum wells. Physical Review B - Condensed Matter and Materials Physics, 81(11), [115332]. https://doi.org/10.1103/PhysRevB.81.115332

Vancouver

Glazov MM, Sherman EY. Spin relaxation in multiple (110) quantum wells. Physical Review B - Condensed Matter and Materials Physics. 2010 Mar 30;81(11). 115332. https://doi.org/10.1103/PhysRevB.81.115332

Author

Glazov, M. M. ; Sherman, E. Ya. / Spin relaxation in multiple (110) quantum wells. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 11.

BibTeX

@article{94537dfd28c34fc8ab31107d27c38e72,
title = "Spin relaxation in multiple (110) quantum wells",
abstract = "We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very strong enhancement of the spin relaxation time. In a degenerate electron gas, the Pauli blocking suppresses the electron-electron collisions, and the leading spin relaxation mechanism comes from the field of donors. If the electron gas is nondegenerate the electron-electron collisions and scattering by the ionized donors give similar contributions to the relaxation rate.",
author = "Glazov, {M. M.} and Sherman, {E. Ya}",
year = "2010",
month = mar,
day = "30",
doi = "10.1103/PhysRevB.81.115332",
language = "English",
volume = "81",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "11",

}

RIS

TY - JOUR

T1 - Spin relaxation in multiple (110) quantum wells

AU - Glazov, M. M.

AU - Sherman, E. Ya

PY - 2010/3/30

Y1 - 2010/3/30

N2 - We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very strong enhancement of the spin relaxation time. In a degenerate electron gas, the Pauli blocking suppresses the electron-electron collisions, and the leading spin relaxation mechanism comes from the field of donors. If the electron gas is nondegenerate the electron-electron collisions and scattering by the ionized donors give similar contributions to the relaxation rate.

AB - We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very strong enhancement of the spin relaxation time. In a degenerate electron gas, the Pauli blocking suppresses the electron-electron collisions, and the leading spin relaxation mechanism comes from the field of donors. If the electron gas is nondegenerate the electron-electron collisions and scattering by the ionized donors give similar contributions to the relaxation rate.

UR - http://www.scopus.com/inward/record.url?scp=77955065774&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.81.115332

DO - 10.1103/PhysRevB.81.115332

M3 - Article

AN - SCOPUS:77955065774

VL - 81

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 11

M1 - 115332

ER -

ID: 36443675