Research output: Contribution to journal › Article › peer-review
Spin Orientation of Two-Dimensional Electrons Driven by Temperature-Tunable Competition of Spin-Orbit and Exchange-Magnetic Interactions. / Generalov, Alexander; Otrokov, Mikhail M.; Chikina, Alla; Kliemt, Kristin; Kummer, Kurt; Hoeppner, Marc; Guettler, Monika; Seiro, Silvia; Fedorov, Alexander; Schulz, Susanne; Danzenbaecher, Steffen; Chulkov, Evgueni V.; Geibel, Christoph; Laubschat, Clemens; Dudin, Pavel; Hoesch, Moritz; Kim, Timur; Radovic, Milan; Shi, Ming; Plumb, Nicholas C.; Krellner, Cornelius; Vyalikh, Denis V.
In: Nano Letters, Vol. 17, No. 2, 2017, p. 811-820.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Spin Orientation of Two-Dimensional Electrons Driven by Temperature-Tunable Competition of Spin-Orbit and Exchange-Magnetic Interactions
AU - Generalov, Alexander
AU - Otrokov, Mikhail M.
AU - Chikina, Alla
AU - Kliemt, Kristin
AU - Kummer, Kurt
AU - Hoeppner, Marc
AU - Guettler, Monika
AU - Seiro, Silvia
AU - Fedorov, Alexander
AU - Schulz, Susanne
AU - Danzenbaecher, Steffen
AU - Chulkov, Evgueni V.
AU - Geibel, Christoph
AU - Laubschat, Clemens
AU - Dudin, Pavel
AU - Hoesch, Moritz
AU - Kim, Timur
AU - Radovic, Milan
AU - Shi, Ming
AU - Plumb, Nicholas C.
AU - Krellner, Cornelius
AU - Vyalikh, Denis V.
PY - 2017
Y1 - 2017
N2 - Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin based devices. Spin orbit and exchange magnetic interactions (SOI and EMI) are two fundamental fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh2Si2 appears to be a unique model system, where concurrent SOT and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOT leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.
AB - Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin based devices. Spin orbit and exchange magnetic interactions (SOI and EMI) are two fundamental fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh2Si2 appears to be a unique model system, where concurrent SOT and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOT leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.
KW - Spin-orbit coupling
KW - exchange-magnetic interaction
KW - rare-earth intermetallics
KW - antiferromagnetism
KW - ARPES
KW - AUGMENTED-WAVE METHOD
KW - TOPOLOGICAL INSULATORS
KW - NEUTRON-DIFFRACTION
KW - SURFACE
KW - SEMICONDUCTORS
KW - SPINTRONICS
KW - ITINERANT
KW - HORH2SI2
KW - PLANE
KW - STATE
U2 - 10.1021/acs.nanolett.6b04036
DO - 10.1021/acs.nanolett.6b04036
M3 - статья
VL - 17
SP - 811
EP - 820
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 2
ER -
ID: 9323180