Standard

Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots. / Braun, P. F.; Lombez, L.; Marie, X.; Urbaszek, B.; Amand, T.; Renucci, P.; Gauffier, J. L.; Kalevich, V. K.; Kavokin, K. V.; Krebs, O.; Voisin, P.

In: Brazilian Journal of Physics, Vol. 36, No. 2 A, 01.01.2006, p. 482-487.

Research output: Contribution to journal › Article › peer-review

Harvard

Braun, PF, Lombez, L, Marie, X, Urbaszek, B, Amand, T, Renucci, P, Gauffier, JL, Kalevich, VK, Kavokin, KV, Krebs, O & Voisin, P 2006, 'Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots', Brazilian Journal of Physics, vol. 36, no. 2 A, pp. 482-487. https://doi.org/10.1590/S0103-97332006000300067

APA

Braun, P. F., Lombez, L., Marie, X., Urbaszek, B., Amand, T., Renucci, P., Gauffier, J. L., Kalevich, V. K., Kavokin, K. V., Krebs, O., & Voisin, P. (2006). Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots. Brazilian Journal of Physics, 36(2 A), 482-487. https://doi.org/10.1590/S0103-97332006000300067

Vancouver

Braun PF, Lombez L, Marie X, Urbaszek B, Amand T, Renucci P et al. Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots. Brazilian Journal of Physics. 2006 Jan 1;36(2 A):482-487. https://doi.org/10.1590/S0103-97332006000300067

Author

Braun, P. F. ; Lombez, L. ; Marie, X. ; Urbaszek, B. ; Amand, T. ; Renucci, P. ; Gauffier, J. L. ; Kalevich, V. K. ; Kavokin, K. V. ; Krebs, O. ; Voisin, P. / Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots. In: Brazilian Journal of Physics. 2006 ; Vol. 36, No. 2 A. pp. 482-487.

BibTeX

@article{af471d43853a419dad3e2d7efc58a079,
title = "Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots",
abstract = "We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TΔ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, {"}written{"} with a first pulse, remains stable long enough to be {"}read{"} 15ns later with a second pulse.",
keywords = "InAs/GaAs quantum dots, Spin dynamics, Time resolved photoluminescence",
author = "Braun, {P. F.} and L. Lombez and X. Marie and B. Urbaszek and T. Amand and P. Renucci and Gauffier, {J. L.} and Kalevich, {V. K.} and Kavokin, {K. V.} and O. Krebs and P. Voisin",
year = "2006",
month = jan,
day = "1",
doi = "10.1590/S0103-97332006000300067",
language = "English",
volume = "36",
pages = "482--487",
journal = "Brazilian Journal of Physics",
issn = "0103-9733",
publisher = "Springer Nature",
number = "2 A",

}

RIS

TY - JOUR

T1 - Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots

AU - Braun, P. F.

AU - Lombez, L.

AU - Marie, X.

AU - Urbaszek, B.

AU - Amand, T.

AU - Renucci, P.

AU - Gauffier, J. L.

AU - Kalevich, V. K.

AU - Kavokin, K. V.

AU - Krebs, O.

AU - Voisin, P.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TΔ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, "written" with a first pulse, remains stable long enough to be "read" 15ns later with a second pulse.

AB - We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TΔ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field of the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, "written" with a first pulse, remains stable long enough to be "read" 15ns later with a second pulse.

KW - InAs/GaAs quantum dots

KW - Spin dynamics

KW - Time resolved photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=33746036860&partnerID=8YFLogxK

U2 - 10.1590/S0103-97332006000300067

DO - 10.1590/S0103-97332006000300067

M3 - Article

AN - SCOPUS:33746036860

VL - 36

SP - 482

EP - 487

JO - Brazilian Journal of Physics

JF - Brazilian Journal of Physics

SN - 0103-9733

IS - 2 A

ER -

ID: 39910297