Research output: Contribution to journal › Article › peer-review
Spectroscopy of high-energy excitonic states in ultra-thick GaAs quantum wells with a perfect crystal structure. / Ubyivovk, E.; Dolgikh, Yu.K.; Efimov, Yu.P.; Eliseev, S.A.; Gerlovin, I.Ya.; Ignatiev, I.V.; Petrov, V.V.; Ovsyankin, V.V.
In: Journal of Luminescence, Vol. 102-103, 2003, p. 751-754.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Spectroscopy of high-energy excitonic states in ultra-thick GaAs quantum wells with a perfect crystal structure
AU - Ubyivovk, E.
AU - Dolgikh, Yu.K.
AU - Efimov, Yu.P.
AU - Eliseev, S.A.
AU - Gerlovin, I.Ya.
AU - Ignatiev, I.V.
AU - Petrov, V.V.
AU - Ovsyankin, V.V.
PY - 2003
Y1 - 2003
N2 - In this work, we report on observation of the effects of spatial quantization in very thick (up to 800 nm) GaAs layers confined with the AlGaAs barrier layers. We studied reflectance spectra of a series of hetero-structures with the quantum wells’ thickness varying from 270 to 800 nm. The spectra were measured at 10K in the spectral range 1500–1600 meV. It was found that the reflectance exhibits a quasi-periodic modulation associated with the quantum-size effect. The detection of the quantum-size effect in so thick layers indicates high quality of our heterostructures.
AB - In this work, we report on observation of the effects of spatial quantization in very thick (up to 800 nm) GaAs layers confined with the AlGaAs barrier layers. We studied reflectance spectra of a series of hetero-structures with the quantum wells’ thickness varying from 270 to 800 nm. The spectra were measured at 10K in the spectral range 1500–1600 meV. It was found that the reflectance exhibits a quasi-periodic modulation associated with the quantum-size effect. The detection of the quantum-size effect in so thick layers indicates high quality of our heterostructures.
M3 - Article
VL - 102-103
SP - 751
EP - 754
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
ER -
ID: 5328290