Spectra of quantum states in thin metal films and their modification

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Spectra of quantum states in thin metal films and their modification : Al/ W(110) system. / Rybkin, A. G.; Shikin, A. M.; Adamchuk, V. K.

In: Bulletin of the Russian Academy of Sciences: Physics, Vol. 73, No. 5, 03.07.2009, p. 683-685.

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Author

Rybkin, A. G. ; Shikin, A. M. ; Adamchuk, V. K. / Spectra of quantum states in thin metal films and their modification : Al/ W(110) system. In: Bulletin of the Russian Academy of Sciences: Physics. 2009 ; Vol. 73, No. 5. pp. 683-685.

BibTeX

@article{79e615b0fee44f7d83ef2e0ae220c2ca,

title = "Spectra of quantum states in thin metal films and their modification: Al/ W(110) system",

abstract = "The modification of spectra of quantum well states of sp-type in thin Al films on the W(110) surface was experimentally investigated by angular-resolved photoelectron spectroscopy both during deposition and in dependence of the detection angle. Quantum well states are observed for the partially filled band of valence states in the range of binding energies from 4.4 eV to the Fermi level. An Al film with a thickness of 11 monolayers exhibits a jump of the dispersion relations of quantum well states in the local W(110) band gap in the ΓS direction and splitting of these relations due to the effect of substrate electronic structure on the formed spectrum of quantum states and their possible spin polarization.",

author = "Rybkin, {A. G.} and Shikin, {A. M.} and Adamchuk, {V. K.}",

year = "2009",

month = jul,

day = "3",

doi = "10.3103/S1062873809050463",

language = "English",

volume = "73",

pages = "683--685",

journal = "Bulletin of the Russian Academy of Sciences: Physics",

issn = "1062-8738",

publisher = "Allerton Press, Inc.",

number = "5",

}

RIS

TY - JOUR

T1 - Spectra of quantum states in thin metal films and their modification

T2 - Al/ W(110) system

AU - Rybkin, A. G.

AU - Shikin, A. M.

AU - Adamchuk, V. K.

PY - 2009/7/3

Y1 - 2009/7/3

N2 - The modification of spectra of quantum well states of sp-type in thin Al films on the W(110) surface was experimentally investigated by angular-resolved photoelectron spectroscopy both during deposition and in dependence of the detection angle. Quantum well states are observed for the partially filled band of valence states in the range of binding energies from 4.4 eV to the Fermi level. An Al film with a thickness of 11 monolayers exhibits a jump of the dispersion relations of quantum well states in the local W(110) band gap in the ΓS direction and splitting of these relations due to the effect of substrate electronic structure on the formed spectrum of quantum states and their possible spin polarization.

AB - The modification of spectra of quantum well states of sp-type in thin Al films on the W(110) surface was experimentally investigated by angular-resolved photoelectron spectroscopy both during deposition and in dependence of the detection angle. Quantum well states are observed for the partially filled band of valence states in the range of binding energies from 4.4 eV to the Fermi level. An Al film with a thickness of 11 monolayers exhibits a jump of the dispersion relations of quantum well states in the local W(110) band gap in the ΓS direction and splitting of these relations due to the effect of substrate electronic structure on the formed spectrum of quantum states and their possible spin polarization.

UR - http://www.scopus.com/inward/record.url?scp=67649439181&partnerID=8YFLogxK

U2 - 10.3103/S1062873809050463

DO - 10.3103/S1062873809050463

M3 - Article

AN - SCOPUS:67649439181

VL - 73

SP - 683

EP - 685

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

IS - 5

ER -

ID: 36288465