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Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals. / Немов, Сергей Александрович; Андреева, В.Д.; Улашкевич, Юрий Владимирович; Поволоцкий, Алексей Валерьевич; Аллахан, А.А.

In: Semiconductors, Vol. 52, No. 10, 01.10.2018, p. 1317-1322.

Research output: Contribution to journalArticlepeer-review

Harvard

Немов, СА, Андреева, ВД, Улашкевич, ЮВ, Поволоцкий, АВ & Аллахан, АА 2018, 'Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals', Semiconductors, vol. 52, no. 10, pp. 1317-1322. https://doi.org/10.1134/S1063782618100159

APA

Немов, С. А., Андреева, В. Д., Улашкевич, Ю. В., Поволоцкий, А. В., & Аллахан, А. А. (2018). Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals. Semiconductors, 52(10), 1317-1322. https://doi.org/10.1134/S1063782618100159

Vancouver

Немов СА, Андреева ВД, Улашкевич ЮВ, Поволоцкий АВ, Аллахан АА. Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals. Semiconductors. 2018 Oct 1;52(10):1317-1322. https://doi.org/10.1134/S1063782618100159

Author

Немов, Сергей Александрович ; Андреева, В.Д. ; Улашкевич, Юрий Владимирович ; Поволоцкий, Алексей Валерьевич ; Аллахан, А.А. / Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals. In: Semiconductors. 2018 ; Vol. 52, No. 10. pp. 1317-1322.

BibTeX

@article{9efa9792eac24e5ba9426bc0de491280,
title = "Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals",
abstract = "Abstract: A comprehensive study (X-ray phase analysis, Raman spectroscopy, and IR reflectance measurements) of p-Sb 2Te 3 –  xSe x (0 ≤ x ≤ 0.10) crystals synthesized by the Czochralski method is carried out. The X-ray phase data and Raman spectra show that all of the alloy samples under study are rhombohedral crystals in structure, with unit-cell parameters close to those of Sb 2Te 3 crystals. At the same time, the formation of regions with different degrees of the replacement of Te atoms with Se atoms is observed. The reflectance spectra of the crystals, R(ν), have a characteristic minimum at about 1000 cm –1. The minimum is attributed to hole plasma vibrations. The plasma minimum systematically shifts to higher frequencies, as the Se content is increased. Calculation of the reflectance spectra in the context of the Drude–Lorentz model satisfactorily describes the experimental data; in this case, it is necessary to take into account also the contribution of optical crystal-lattice vibrations to spectra in the low-frequency region. The calculation makes it possible to determine the optical parameters of the crystals and to estimate the hole effective mass and the optical conductivity. ",
author = "Немов, {Сергей Александрович} and В.Д. Андреева and Улашкевич, {Юрий Владимирович} and Поволоцкий, {Алексей Валерьевич} and А.А. Аллахан",
year = "2018",
month = oct,
day = "1",
doi = "10.1134/S1063782618100159",
language = "English",
volume = "52",
pages = "1317--1322",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals

AU - Немов, Сергей Александрович

AU - Андреева, В.Д.

AU - Улашкевич, Юрий Владимирович

AU - Поволоцкий, Алексей Валерьевич

AU - Аллахан, А.А.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - Abstract: A comprehensive study (X-ray phase analysis, Raman spectroscopy, and IR reflectance measurements) of p-Sb 2Te 3 –  xSe x (0 ≤ x ≤ 0.10) crystals synthesized by the Czochralski method is carried out. The X-ray phase data and Raman spectra show that all of the alloy samples under study are rhombohedral crystals in structure, with unit-cell parameters close to those of Sb 2Te 3 crystals. At the same time, the formation of regions with different degrees of the replacement of Te atoms with Se atoms is observed. The reflectance spectra of the crystals, R(ν), have a characteristic minimum at about 1000 cm –1. The minimum is attributed to hole plasma vibrations. The plasma minimum systematically shifts to higher frequencies, as the Se content is increased. Calculation of the reflectance spectra in the context of the Drude–Lorentz model satisfactorily describes the experimental data; in this case, it is necessary to take into account also the contribution of optical crystal-lattice vibrations to spectra in the low-frequency region. The calculation makes it possible to determine the optical parameters of the crystals and to estimate the hole effective mass and the optical conductivity.

AB - Abstract: A comprehensive study (X-ray phase analysis, Raman spectroscopy, and IR reflectance measurements) of p-Sb 2Te 3 –  xSe x (0 ≤ x ≤ 0.10) crystals synthesized by the Czochralski method is carried out. The X-ray phase data and Raman spectra show that all of the alloy samples under study are rhombohedral crystals in structure, with unit-cell parameters close to those of Sb 2Te 3 crystals. At the same time, the formation of regions with different degrees of the replacement of Te atoms with Se atoms is observed. The reflectance spectra of the crystals, R(ν), have a characteristic minimum at about 1000 cm –1. The minimum is attributed to hole plasma vibrations. The plasma minimum systematically shifts to higher frequencies, as the Se content is increased. Calculation of the reflectance spectra in the context of the Drude–Lorentz model satisfactorily describes the experimental data; in this case, it is necessary to take into account also the contribution of optical crystal-lattice vibrations to spectra in the low-frequency region. The calculation makes it possible to determine the optical parameters of the crystals and to estimate the hole effective mass and the optical conductivity.

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UR - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85052951669&doi=10.1134%2FS1063782618100159&partnerID=40&md5=64b5c5cfcfce722bb701777135c54178

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U2 - 10.1134/S1063782618100159

DO - 10.1134/S1063782618100159

M3 - Article

VL - 52

SP - 1317

EP - 1322

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 35800370