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Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures
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Article
Department of Solid State Electronics
Overview
Cite this
DOI
https://doi.org/10.1134/S1063782613040040
Other version
A.P. Baraban
P.P. Konorov
V.A. Dmitriev
V.A. Prokof'ev
Original language
English
Pages (from-to)
511-513
Journal
Semiconductors
Volume
47
Issue number
4
DOIs
https://doi.org/10.1134/S1063782613040040
State
Published -
2013
ID: 7379200