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Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon. / Dubrovskii, Vladimir G.; Kim, Wonjong; Piazza, Valerio; Güniat, Lucas; Fontcuberta I Morral, Anna.

In: Nano Letters, Vol. 21, No. 7, 05.04.2021, p. 3139-3145.

Research output: Contribution to journal › Article › peer-review

Harvard

Dubrovskii, VG, Kim, W, Piazza, V, Güniat, L & Fontcuberta I Morral, A 2021, 'Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon', Nano Letters, vol. 21, no. 7, pp. 3139-3145. https://doi.org/10.1021/acs.nanolett.1c00349

APA

Dubrovskii, V. G., Kim, W., Piazza, V., Güniat, L., & Fontcuberta I Morral, A. (2021). Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon. Nano Letters, 21(7), 3139-3145. https://doi.org/10.1021/acs.nanolett.1c00349

Vancouver

Dubrovskii VG, Kim W, Piazza V, Güniat L, Fontcuberta I Morral A. Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon. Nano Letters. 2021 Apr 5;21(7):3139-3145. https://doi.org/10.1021/acs.nanolett.1c00349

Author

Dubrovskii, Vladimir G. ; Kim, Wonjong ; Piazza, Valerio ; Güniat, Lucas ; Fontcuberta I Morral, Anna. / Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon. In: Nano Letters. 2021 ; Vol. 21, No. 7. pp. 3139-3145.

BibTeX

@article{267505db660943f29455f8aff3f70fc4,
title = "Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon",
abstract = "Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which self-assembly is limited to reduced regions on a patterned silicon substrate. While nanowires grow with a wide distribution of diameters, we note a mostly binary occurrence of crystal phases. Self-catalyzed GaAs nanowires form in either a wurtzite or zincblende phase in the same growth run. Quite surprisingly, thicker nanowires are wurtzite and thinner nanowires are zincblende, while the common view predicts the reverse trend. We relate this phenomenon to the influx of Ga adatoms by surface diffusion, which results in different contact angles of Ga droplets. We demonstrate the wurtzite phase of thick GaAs NWs up to 200 nm in diameter in the Au-free approach, which has not been achieved so far to our knowledge.",
keywords = "contact angle, crystal phase, GaAs nanowires, growth rate, pinholes",
author = "Dubrovskii, {Vladimir G.} and Wonjong Kim and Valerio Piazza and Lucas G{\"u}niat and {Fontcuberta I Morral}, Anna",
note = "Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",
year = "2021",
month = apr,
day = "5",
doi = "10.1021/acs.nanolett.1c00349",
language = "English",
volume = "21",
pages = "3139--3145",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

AU - Dubrovskii, Vladimir G.

AU - Kim, Wonjong

AU - Piazza, Valerio

AU - Güniat, Lucas

AU - Fontcuberta I Morral, Anna

N1 - Publisher Copyright: © 2021 American Chemical Society.

PY - 2021/4/5

Y1 - 2021/4/5

N2 - Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which self-assembly is limited to reduced regions on a patterned silicon substrate. While nanowires grow with a wide distribution of diameters, we note a mostly binary occurrence of crystal phases. Self-catalyzed GaAs nanowires form in either a wurtzite or zincblende phase in the same growth run. Quite surprisingly, thicker nanowires are wurtzite and thinner nanowires are zincblende, while the common view predicts the reverse trend. We relate this phenomenon to the influx of Ga adatoms by surface diffusion, which results in different contact angles of Ga droplets. We demonstrate the wurtzite phase of thick GaAs NWs up to 200 nm in diameter in the Au-free approach, which has not been achieved so far to our knowledge.

AB - Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which self-assembly is limited to reduced regions on a patterned silicon substrate. While nanowires grow with a wide distribution of diameters, we note a mostly binary occurrence of crystal phases. Self-catalyzed GaAs nanowires form in either a wurtzite or zincblende phase in the same growth run. Quite surprisingly, thicker nanowires are wurtzite and thinner nanowires are zincblende, while the common view predicts the reverse trend. We relate this phenomenon to the influx of Ga adatoms by surface diffusion, which results in different contact angles of Ga droplets. We demonstrate the wurtzite phase of thick GaAs NWs up to 200 nm in diameter in the Au-free approach, which has not been achieved so far to our knowledge.

KW - contact angle

KW - crystal phase

KW - GaAs nanowires

KW - growth rate

KW - pinholes

UR - http://www.scopus.com/inward/record.url?scp=85104276053&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.1c00349

DO - 10.1021/acs.nanolett.1c00349

M3 - Article

C2 - 33818097

AN - SCOPUS:85104276053

VL - 21

SP - 3139

EP - 3145

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 7

ER -

ID: 88770984