Research output: Contribution to journal › Article › peer-review
X-ray absorption near edge structure (XANES) measurements at the Si and N K-edges of ternary Si-C-N compounds are applied to analyze the changes of structural units owing to the thermally induced ceramization of silicon dicarbodiimide Si(N=C=N)2 at temperatures up to 1600°C. Samples synthesized below 800°C show an environment of silicon consisting of carbodiimide (N=C=N) groups. Further annealing leads to a crystalline phase, Si2CN4, which combines the structural units (Si-N-Si) and (Si-N=C=N). Recorded spectra of samples annealed at temperatures higher than 1200°C show the decomposition of Si2CN4. The material then transforms to a Si3N4-SiC composite material through an intermediate amorphous Si-C-N phase.
Original language | English |
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Pages (from-to) | 253-257 |
Number of pages | 5 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 96 |
Issue number | 1-3 |
State | Published - 1 Nov 1998 |
ID: 43209496