DOI

We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

Original languageEnglish
Article number265001
Number of pages8
JournalJournal of Physics Condensed Matter
Volume30
Issue number26
DOIs
StatePublished - 6 Jun 2018

    Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

    Research areas

  • (BiSb)Te, Berry phase, electrical transport, quantum oscillation, Shubnikov-de Haas oscillation, topological insulator, SB2TE3, CONDUCTION, BI2SE3, BI2TE3, SURFACE-STATE, (BixSb1-x)(2)Te-3

ID: 36282379