Research output: Contribution to journal › Article › peer-review
Shallow defect density determination in CuIn3Se5 thin film photoabsorber by impedance spectroscopy. / Laes, Kristjan; Bereznev, Sergei; Tverjanovich, A.; Borisov, E. N.; Varema, Tiit; Volobujeva, Olga; Öpik, Andres.
In: Thin Solid Films, Vol. 517, No. 7, 02.02.2009, p. 2286-2290.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Shallow defect density determination in CuIn3Se5 thin film photoabsorber by impedance spectroscopy
AU - Laes, Kristjan
AU - Bereznev, Sergei
AU - Tverjanovich, A.
AU - Borisov, E. N.
AU - Varema, Tiit
AU - Volobujeva, Olga
AU - Öpik, Andres
PY - 2009/2/2
Y1 - 2009/2/2
N2 - A number of CuIn3Se5 photoabsorber films were prepared using pulsed laser deposition technique. Impedance spectroscopy (IS) was used to determine the density of shallow defects in CuIn3Se5 thin film samples. Various contact layers were deposited onto the CuIn3Se5 layers to prepare structures with stable diode-like I-V behavior. It was found that Zn-phthalocyanine is an appropriate material to prepare the barrier layer onto CuIn3Se5 layer for the IS measurements and calculations. For analyzing impedance data a more complex equivalent circuit was used consisting of two blocks of parallel capacitance and resistance in series. Using these data it was shown that it is possible to predict more accurately the distribution of the potential in the structure. Density of free carrier generated by shallow defects was calculated by using two different approaches: the abrupt depletion layer edge approximation and the integral capacitance technique developed some years ago by A.F. Yaremchuk. The concentration of free charge carriers was found to be in the range of 1 × 1015-1 × 1016 cm- 3. IS calculation results are in good agreement with data in literature and the calculated thickness of CuIn3Se5 layers agrees with data obtained by scanning electron microscopy (SEM).
AB - A number of CuIn3Se5 photoabsorber films were prepared using pulsed laser deposition technique. Impedance spectroscopy (IS) was used to determine the density of shallow defects in CuIn3Se5 thin film samples. Various contact layers were deposited onto the CuIn3Se5 layers to prepare structures with stable diode-like I-V behavior. It was found that Zn-phthalocyanine is an appropriate material to prepare the barrier layer onto CuIn3Se5 layer for the IS measurements and calculations. For analyzing impedance data a more complex equivalent circuit was used consisting of two blocks of parallel capacitance and resistance in series. Using these data it was shown that it is possible to predict more accurately the distribution of the potential in the structure. Density of free carrier generated by shallow defects was calculated by using two different approaches: the abrupt depletion layer edge approximation and the integral capacitance technique developed some years ago by A.F. Yaremchuk. The concentration of free charge carriers was found to be in the range of 1 × 1015-1 × 1016 cm- 3. IS calculation results are in good agreement with data in literature and the calculated thickness of CuIn3Se5 layers agrees with data obtained by scanning electron microscopy (SEM).
KW - C-V method
KW - CuIn3Se5
KW - Impedance spectroscopy
KW - Method of integration
KW - Shallow defects
KW - Weak diode
KW - Zn-phtalocyanine
UR - http://www.scopus.com/inward/record.url?scp=58949095772&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2008.10.106
DO - 10.1016/j.tsf.2008.10.106
M3 - Article
AN - SCOPUS:58949095772
VL - 517
SP - 2286
EP - 2290
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 7
ER -
ID: 34616454