Research output: Contribution to journal › Article › peer-review
Semiconductor-metal transitions in melts. / Tver'yanovich, Yu S.; Ugolkov, V. L.; Il'chenko, O. V.
In: Inorganic Materials, Vol. 35, No. 6, 01.12.1999, p. 574-576.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Semiconductor-metal transitions in melts
AU - Tver'yanovich, Yu S.
AU - Ugolkov, V. L.
AU - Il'chenko, O. V.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - The semiconductor-metal transition in Ge-Te melts is treated as a diffuse first-order transition. The melt properties are found to change sharply in the range 3-5 at. % Ge.
AB - The semiconductor-metal transition in Ge-Te melts is treated as a diffuse first-order transition. The melt properties are found to change sharply in the range 3-5 at. % Ge.
UR - http://www.scopus.com/inward/record.url?scp=27544438678&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:27544438678
VL - 35
SP - 574
EP - 576
JO - Inorganic Materials
JF - Inorganic Materials
SN - 0020-1685
IS - 6
ER -
ID: 43155859