Self-consistent quantum calculation of space charge region for accumulation and inversion band bending

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Self-consistent quantum calculation of space charge region for accumulation and inversion band bending. / Yafyasov, A. M.; Ivankiv, I. M.

In: Physica Status Solidi (B) Basic Research, Vol. 208, No. 1, 01.01.1998, p. 41-49.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{20bd2ad2059f4dfc9eacf39ecffb4d17,

title = "Self-consistent quantum calculation of space charge region for accumulation and inversion band bending",

abstract = "A new method of self-consistent quantum calculation of the density of the space charge near the surface of a crystal is carried out for a semiconductor with parabolic dispersion law of bands. The remarkable feature is the solution of the Schr{\"o}dinger equation for electrons and holes in the energy range, including both bound energy states and the states in the continuum. Voltage-capacitance dependences of MIS structures are calculated.",

author = "Yafyasov, {A. M.} and Ivankiv, {I. M.}",

year = "1998",

month = jan,

day = "1",

doi = "10.1002/(SICI)1521-3951(199807)208:1<41::AID-PSSB41>3.0.CO;2-N",

language = "English",

volume = "208",

pages = "41--49",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-Blackwell",

number = "1",

}

RIS

TY - JOUR

T1 - Self-consistent quantum calculation of space charge region for accumulation and inversion band bending

AU - Yafyasov, A. M.

AU - Ivankiv, I. M.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A new method of self-consistent quantum calculation of the density of the space charge near the surface of a crystal is carried out for a semiconductor with parabolic dispersion law of bands. The remarkable feature is the solution of the Schrödinger equation for electrons and holes in the energy range, including both bound energy states and the states in the continuum. Voltage-capacitance dependences of MIS structures are calculated.

AB - A new method of self-consistent quantum calculation of the density of the space charge near the surface of a crystal is carried out for a semiconductor with parabolic dispersion law of bands. The remarkable feature is the solution of the Schrödinger equation for electrons and holes in the energy range, including both bound energy states and the states in the continuum. Voltage-capacitance dependences of MIS structures are calculated.

UR - http://www.scopus.com/inward/record.url?scp=0040081656&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-3951(199807)208:1<41::AID-PSSB41>3.0.CO;2-N

DO - 10.1002/(SICI)1521-3951(199807)208:1<41::AID-PSSB41>3.0.CO;2-N

M3 - Article

AN - SCOPUS:0040081656

VL - 208

SP - 41

EP - 49

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -

ID: 42242213