TY - JOUR

T1 - Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer–Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications

T2 - ACS Applied Nano Materials

AU - Jeong, Junseok

AU - Jin, Dae Kwon

AU - Cha, Janghwan

AU - Kang, Bong Kyun

AU - Wang, Qingxiao

AU - Choi, Joonghoon

AU - Lee, Sang Wook

AU - Mikhailovskii, Vladimir Yu.

AU - Neplokh, Vladimir

AU - Amador-Mendez, Nuño

AU - Tchernycheva, Maria

AU - Yang, Woo Seok

AU - Yoo, Jinkyoung

AU - Kim, Moon J.

AU - Hong, Suklyun

AU - Hong, Young Joon

N1 - Publisher Copyright: Copyright © 2020 American Chemical Society.

PY - 2020/9/25

Y1 - 2020/9/25

N2 - Selective-area remote epitaxy (SA-REpi) is demonstrated for fabricating mechanically releasable position-controlled ZnO microrod (MR) arrays from donor wafers in an arrayed form. Intaglio-patterned graphene, consisting of basal single-layer graphene (SLG) overlayered with multilayer graphene (MLG) patterned with perforated holes, is transferred onto a GaN/Al2O3 wafer on which the hydrothermal synthesis is performed for growing ZnO MRs. The basal SLG area exposed through the MLG pattern yields ZnO MRs, whereas the MLG plateau inhibits the growth. The noncovalent remote epitaxial heterointerface enables the release of the MR overlayer in the arrayed form, and the original source wafer is refurbished for reproducibly repeating the SA-REpi. Density-functional theory calculations suggest that localized surface charge density is induced on the surface of SLG by the underlying GaN across ultrathin SLG, which possibly provides a driving force for precursor adatoms and the following remote epitaxy of ZnO. In contrast, the induction of the charge density redistribution does not clearly occur through MLG; so, that keeps the surface of MLG nearly charge-neutral. The diameter and spacing of ZnO MRs are controlled in a designed way by changing the pattern geometries. High-resolution scanning transmission electron microscopy reveals the remote heteroepitaxial relationship at an atomic level. The remote epitaxy is expected to provide an ideal platform to transfer the addressable spatial arrays of nano- or micro-architecture semiconductor components to arbitrary target surfaces directly after the growth without the assembly procedures.

AB - Selective-area remote epitaxy (SA-REpi) is demonstrated for fabricating mechanically releasable position-controlled ZnO microrod (MR) arrays from donor wafers in an arrayed form. Intaglio-patterned graphene, consisting of basal single-layer graphene (SLG) overlayered with multilayer graphene (MLG) patterned with perforated holes, is transferred onto a GaN/Al2O3 wafer on which the hydrothermal synthesis is performed for growing ZnO MRs. The basal SLG area exposed through the MLG pattern yields ZnO MRs, whereas the MLG plateau inhibits the growth. The noncovalent remote epitaxial heterointerface enables the release of the MR overlayer in the arrayed form, and the original source wafer is refurbished for reproducibly repeating the SA-REpi. Density-functional theory calculations suggest that localized surface charge density is induced on the surface of SLG by the underlying GaN across ultrathin SLG, which possibly provides a driving force for precursor adatoms and the following remote epitaxy of ZnO. In contrast, the induction of the charge density redistribution does not clearly occur through MLG; so, that keeps the surface of MLG nearly charge-neutral. The diameter and spacing of ZnO MRs are controlled in a designed way by changing the pattern geometries. High-resolution scanning transmission electron microscopy reveals the remote heteroepitaxial relationship at an atomic level. The remote epitaxy is expected to provide an ideal platform to transfer the addressable spatial arrays of nano- or micro-architecture semiconductor components to arbitrary target surfaces directly after the growth without the assembly procedures.

KW - Remote epitaxy

KW - selective-area epitaxy

KW - graphene

KW - ZnO

KW - hydrothermal growth

KW - flexible device

UR - http://www.scopus.com/inward/record.url?scp=85094661633&partnerID=8YFLogxK

U2 - 10.1021/acsanm.0c01656

DO - 10.1021/acsanm.0c01656

M3 - Article

VL - 3

SP - 8920

EP - 8930

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

SN - 2574-0970

IS - 9

ER -