• Emmanuel Chereau
  • Vladimir G. Dubrovskii
  • Ethan Diak
  • Elias Semlali
  • Geoffrey Avit
  • Agnès Trassoudaine
  • Evelyne Gil
  • Ray LaPierre
  • Yamina André
Nanowires (NWs) are promising for the integration of III-V compound-based electrical and optical devices on Si. Selective area growth (SAG) of InxGa1-xAs NWs with compositions x varying from 0.34 to 0.90 is achieved. NWs are grown on patterned Si(111) substrates by hydride vapor phase epitaxy (HVPE) at temperatures around 690 °C. The composition is measured using EDX profiles along their lengths and found to be quite homogeneous. Theoretical analysis revealed that the NW composition is kinetically controlled and well-fit by the one-parametric Langmuir-McLean formula, with no thermodynamic factors influencing the compositional trend. This study highlights the capability of catalyst-free HVPE SAG to grow highly uniform InGaAs NW arrays with a widely tunable composition on Si substrates.
Original languageEnglish
Pages (from-to)17417–17423
Number of pages7
JournalACS Applied Nano Materials
Volume7
Issue number15
DOIs
StatePublished - 29 Jul 2024

    Research areas

  • EDX, HVPE, InGaAs, composition, nanowires

ID: 124349591