Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo1-xNixSb semiconductor alloy is varied. Donor impurities

Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo_1-xNi_xSb semiconductor alloy is varied. Donor impurities

Research output: Contribution to journal › Article › peer-review

Department of Nuclear Physics Research Methods

DOI

https://doi.org/10.1134/S1063782606070074
Final published version

V. A. Romaka
M. G. Shelyapina
Yu V. Stadnyk
D. Fruchart
L. P. Romaka
V. F. Chekurin

The role of the impurity donor band in the conductivity of the heavily doped and compensated intermetallic TiCoSb semiconductor is determined. The electronic structure of the TiCo_1-x Ni_xSb semiconductor alloy is calculated. A model of impurity band transformation in the TiCoSb semiconductor due to donor impurity doping is suggested. The transition from activated to metallic conductivity when varying the TiCo_1-x Ni _xSb alloy composition is detected, which we identify with the Anderson transition.

Original language	English
Pages (from-to)	776-780
Number of pages	5
Journal	Semiconductors
Volume	40
Issue number	7
DOIs	https://doi.org/10.1134/S1063782606070074
State	Published - Jul 2006

Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

ID: 16796823