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Resonat luminescence of disordered GaAs structures: from phonon replica to exciton. / Davydov, V.G.; Kapitonov, Yu. V.; Shapochkin, P. Yu.; Solovev, I. A.; Dolgikh, Yu. K.; Eliseev, S. A.; Efimov, Yu. P.; Petrov, V. V.; Ovsyankin, V. V.
Proceedings of 22nd international symposium NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, Saint-Petersburg, June 23-27, 2014.. САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК, 2014. p. 138-139.
Research output: Chapter in Book/Report/Conference proceeding › Article in an anthology › Research
Harvard
Davydov, VG, Kapitonov, YV, Shapochkin, PY, Solovev, IA, Dolgikh, YK, Eliseev, SA, Efimov, YP, Petrov, VV & Ovsyankin, VV 2014,
Resonat luminescence of disordered GaAs structures: from phonon replica to exciton. in
Proceedings of 22nd international symposium NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, Saint-Petersburg, June 23-27, 2014.. САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК, pp. 138-139.
APA
Davydov, V. G., Kapitonov, Y. V., Shapochkin, P. Y., Solovev, I. A., Dolgikh, Y. K., Eliseev, S. A., Efimov, Y. P., Petrov, V. V., & Ovsyankin, V. V. (2014).
Resonat luminescence of disordered GaAs structures: from phonon replica to exciton. In
Proceedings of 22nd international symposium NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, Saint-Petersburg, June 23-27, 2014. (pp. 138-139). САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК.
Vancouver
Author
Davydov, V.G. ; Kapitonov, Yu. V. ; Shapochkin, P. Yu. ; Solovev, I. A. ; Dolgikh, Yu. K. ; Eliseev, S. A. ; Efimov, Yu. P. ; Petrov, V. V. ; Ovsyankin, V. V. /
Resonat luminescence of disordered GaAs structures: from phonon replica to exciton. Proceedings of 22nd international symposium NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, Saint-Petersburg, June 23-27, 2014.. САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК, 2014. pp. 138-139
BibTeX
@inbook{acf1848c4a1f46fcb88a43bec977c295,
title = "Resonat luminescence of disordered GaAs structures: from phonon replica to exciton.",
abstract = "Modern Ti:sapphire and semiconductor lasers readily tunable over desirable range combined with conventional spectrograph provide rather informative tool for luminescwnt study of semiconductor steuctures. Continuous variation of the excitation wavelength while registering the luminescence spectra yields a 2D array of rich data which are useful for quantitative analysis as well as for visual evaluation at a glance, provided they are appropriately visualized. Here an implementation of such a technique is presented, together with the example array of spectra obtained fromthe GaAs inhomogeneous sample.",
keywords = "Luminescence, GaAs, inhomogeneous broadening, exciton, phonon replica",
author = "V.G. Davydov and Kapitonov, {Yu. V.} and Shapochkin, {P. Yu.} and Solovev, {I. A.} and Dolgikh, {Yu. K.} and Eliseev, {S. A.} and Efimov, {Yu. P.} and Petrov, {V. V.} and Ovsyankin, {V. V.}",
year = "2014",
language = "не определен",
isbn = "978-5-906433-09-1",
pages = "138--139",
booktitle = "Proceedings of 22nd international symposium NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, Saint-Petersburg, June 23-27, 2014.",
publisher = "САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК",
address = "Российская Федерация",
}
RIS
TY - CHAP
T1 - Resonat luminescence of disordered GaAs structures: from phonon replica to exciton.
AU - Davydov, V.G.
AU - Kapitonov, Yu. V.
AU - Shapochkin, P. Yu.
AU - Solovev, I. A.
AU - Dolgikh, Yu. K.
AU - Eliseev, S. A.
AU - Efimov, Yu. P.
AU - Petrov, V. V.
AU - Ovsyankin, V. V.
PY - 2014
Y1 - 2014
N2 - Modern Ti:sapphire and semiconductor lasers readily tunable over desirable range combined with conventional spectrograph provide rather informative tool for luminescwnt study of semiconductor steuctures. Continuous variation of the excitation wavelength while registering the luminescence spectra yields a 2D array of rich data which are useful for quantitative analysis as well as for visual evaluation at a glance, provided they are appropriately visualized. Here an implementation of such a technique is presented, together with the example array of spectra obtained fromthe GaAs inhomogeneous sample.
AB - Modern Ti:sapphire and semiconductor lasers readily tunable over desirable range combined with conventional spectrograph provide rather informative tool for luminescwnt study of semiconductor steuctures. Continuous variation of the excitation wavelength while registering the luminescence spectra yields a 2D array of rich data which are useful for quantitative analysis as well as for visual evaluation at a glance, provided they are appropriately visualized. Here an implementation of such a technique is presented, together with the example array of spectra obtained fromthe GaAs inhomogeneous sample.
KW - Luminescence
KW - GaAs
KW - inhomogeneous broadening
KW - exciton
KW - phonon replica
M3 - статья в сборнике
SN - 978-5-906433-09-1
SP - 138
EP - 139
BT - Proceedings of 22nd international symposium NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, Saint-Petersburg, June 23-27, 2014.
PB - САНКТ-ПЕТЕРБУРГСКИЙ НАЦИОНАЛЬНЫЙ ИССЛЕДОВАТЕЛЬСКИЙ АКАДЕМИЧЕСКИЙ УНИВЕРСИТЕТ РОССИЙСКОЙ АКАДЕМИИ НАУК
ER -
