Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Resonance quantum switch : Search of working parameters. / Bagraev, N. T.; Pavlov, B. S.; Yafyasov, A. M.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 275-278 1233690 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
}
TY - GEN
T1 - Resonance quantum switch
T2 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
AU - Bagraev, N. T.
AU - Pavlov, B. S.
AU - Yafyasov, A. M.
PY - 2003/1/1
Y1 - 2003/1/1
N2 - Design of a three-terminal Quantum Switch is suggested in form of a network consisting of a circular quantum well and a four quantum wires attached to it. The conditions of functioning are defined in dependence of the desired working temperature, Fermi level and effective mass of an electron. The speed of switching is estimated.
AB - Design of a three-terminal Quantum Switch is suggested in form of a network consisting of a circular quantum well and a four quantum wires attached to it. The conditions of functioning are defined in dependence of the desired working temperature, Fermi level and effective mass of an electron. The speed of switching is estimated.
KW - Effective mass
KW - Electrons
KW - Energy states
KW - Equations
KW - Particle scattering
KW - Physics
KW - Resonance
KW - Switches
KW - Temperature
KW - Wires
UR - http://www.scopus.com/inward/record.url?scp=19944393311&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2003.1233690
DO - 10.1109/SISPAD.2003.1233690
M3 - Conference contribution
AN - SCOPUS:19944393311
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 275
EP - 278
BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 3 September 2003 through 5 September 2003
ER -
ID: 42240151