Reflectance of a PbSb2Te4 crystal in a wide spectral range

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Reflectance of a PbSb₂Te₄ crystal in a wide spectral range. / Nemov, S. A.; Ulashkevich, Yu V.; Povolotskii, A. V.; Khlamov, I. I.

In: Semiconductors, Vol. 50, No. 10, 01.10.2016, p. 1322-1326.

Research output: Contribution to journal › Article › peer-review

Author

Nemov, S. A. ; Ulashkevich, Yu V. ; Povolotskii, A. V. ; Khlamov, I. I. / Reflectance of a PbSb₂Te₄ crystal in a wide spectral range. In: Semiconductors. 2016 ; Vol. 50, No. 10. pp. 1322-1326.

BibTeX

@article{12640fd969d54e9ea9e03ba44913511d,

title = "Reflectance of a PbSb2Te4 crystal in a wide spectral range",

abstract = "For the anisotropic PbSb2Te4 single crystal with a high hole concentration (p ≈ 3 × 1020 cm–3) and high conductivity (σ ≈ 2500 Ω–1 cm–1), the reflectance spectrum for a cleavage plane orthogonal to the trigonal axis C3 is recorded in a wide spectral range from 50 to 50000 cm–1. It is shown that, in the long-wavelength and mid-infrared regions, the reflectance can be described with consideration for the contribution of plasma vibrations and two crystal-lattice vibrations. The quantitative characteristics of these vibrations are determined. The characteristics are in satisfactory agreement with the electrical parameters. The discrepancies between the values of the hole effective mass calculated by different methods are attributed to the complex structure of the crystal{\textquoteright}s valence band.",

author = "Nemov, {S. A.} and Ulashkevich, {Yu V.} and Povolotskii, {A. V.} and Khlamov, {I. I.}",

year = "2016",

month = oct,

day = "1",

doi = "10.1134/S1063782616100183",

language = "English",

volume = "50",

pages = "1322--1326",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "10",

}

RIS

TY - JOUR

T1 - Reflectance of a PbSb2Te4 crystal in a wide spectral range

AU - Nemov, S. A.

AU - Ulashkevich, Yu V.

AU - Povolotskii, A. V.

AU - Khlamov, I. I.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - For the anisotropic PbSb2Te4 single crystal with a high hole concentration (p ≈ 3 × 1020 cm–3) and high conductivity (σ ≈ 2500 Ω–1 cm–1), the reflectance spectrum for a cleavage plane orthogonal to the trigonal axis C3 is recorded in a wide spectral range from 50 to 50000 cm–1. It is shown that, in the long-wavelength and mid-infrared regions, the reflectance can be described with consideration for the contribution of plasma vibrations and two crystal-lattice vibrations. The quantitative characteristics of these vibrations are determined. The characteristics are in satisfactory agreement with the electrical parameters. The discrepancies between the values of the hole effective mass calculated by different methods are attributed to the complex structure of the crystal’s valence band.

AB - For the anisotropic PbSb2Te4 single crystal with a high hole concentration (p ≈ 3 × 1020 cm–3) and high conductivity (σ ≈ 2500 Ω–1 cm–1), the reflectance spectrum for a cleavage plane orthogonal to the trigonal axis C3 is recorded in a wide spectral range from 50 to 50000 cm–1. It is shown that, in the long-wavelength and mid-infrared regions, the reflectance can be described with consideration for the contribution of plasma vibrations and two crystal-lattice vibrations. The quantitative characteristics of these vibrations are determined. The characteristics are in satisfactory agreement with the electrical parameters. The discrepancies between the values of the hole effective mass calculated by different methods are attributed to the complex structure of the crystal’s valence band.

UR - http://www.scopus.com/inward/record.url?scp=84990913381&partnerID=8YFLogxK

U2 - 10.1134/S1063782616100183

DO - 10.1134/S1063782616100183

M3 - Article

VL - 50

SP - 1322

EP - 1326

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 7601900