Research output: Contribution to journal › Article › peer-review
Refined thermal stability of Cr/Sc multilayers with Si(Be) barrier layers. / Филатова, Елена Олеговна; Сахоненков, Сергей Сергеевич; Соломонов, Антон Викторович; Полковников, Владимир Николаевич; Смертин, Руслан М.
In: Applied Surface Science, Vol. 611, No. Part A, 155743, 15.02.2023.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Refined thermal stability of Cr/Sc multilayers with Si(Be) barrier layers
AU - Филатова, Елена Олеговна
AU - Сахоненков, Сергей Сергеевич
AU - Соломонов, Антон Викторович
AU - Полковников, Владимир Николаевич
AU - Смертин, Руслан М.
N1 - Publisher Copyright: © 2022 Elsevier B.V.
PY - 2023/2/15
Y1 - 2023/2/15
N2 - Effect of Si and Be barrier layers on the intermixing of thin Cr and Sc layers, as-deposited and after annealing in a wide range of temperatures was considered using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), X-ray reflectometry (XRR) and grazing-incidence X-ray diffraction (GIXRD). It was established that annealing of a Si/[Cr/Sc]200 system increases mixing. In the sample heated at a temperature of 450°C during 1h as a result of a full intermixing of the Cr and Sc layers a segregation of scandium on the sample surface is traced. The structure becomes textured with Sc [0 0 1] preferred orientation perpendicular to the substrate. The insertion of the Be barrier layer in the Si/[Cr/Sc]200 system limits the intermixing between chromium and scandium layers during annealing at temperatures up to 350°C, but full degradation of the structure occurs at 450°C. Be barrier layer in the Cr/Sc system prevents a texturing and grain growth in the system, but does not oppose the crystallization process. A silicon layer inserted between the scandium and chromium layers restricts their intermixing. The multilayer retains an amorphous structure.
AB - Effect of Si and Be barrier layers on the intermixing of thin Cr and Sc layers, as-deposited and after annealing in a wide range of temperatures was considered using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), X-ray reflectometry (XRR) and grazing-incidence X-ray diffraction (GIXRD). It was established that annealing of a Si/[Cr/Sc]200 system increases mixing. In the sample heated at a temperature of 450°C during 1h as a result of a full intermixing of the Cr and Sc layers a segregation of scandium on the sample surface is traced. The structure becomes textured with Sc [0 0 1] preferred orientation perpendicular to the substrate. The insertion of the Be barrier layer in the Si/[Cr/Sc]200 system limits the intermixing between chromium and scandium layers during annealing at temperatures up to 350°C, but full degradation of the structure occurs at 450°C. Be barrier layer in the Cr/Sc system prevents a texturing and grain growth in the system, but does not oppose the crystallization process. A silicon layer inserted between the scandium and chromium layers restricts their intermixing. The multilayer retains an amorphous structure.
KW - multilayers Cr/Sc layer intermixing barrier layer thermal stability
KW - multilayers
KW - Cr/Sc
KW - Layer intermixing
KW - Barrier layer
KW - thermal stability
KW - Multilayers
KW - Thermal stability
UR - http://www.scopus.com/inward/record.url?scp=85142150947&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/d0d3abe4-29fa-365b-b0ba-3ab83a349b52/
U2 - 10.1016/j.apsusc.2022.155743
DO - 10.1016/j.apsusc.2022.155743
M3 - Article
VL - 611
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - Part A
M1 - 155743
ER -
ID: 100305510