An induced gamma emission (IGE) upon the transition Sn(119m2)+hvres(65.66 keV)→Sn(119m1)+2hvres was triggered in the polycrystal matrix 119m(2)SnO2 by its cooling to a temperature of 78 K. A measured relative value of the IGE output (ε(SnO2) = 0.00014 and ε(SnO)≤0.000012) strongly correlates with corresponding recoilless fraction: fM(78 K) = 0.235 for 119m(2)SnO2 and fM(10 K) = 0.021 for 119m(2)SnO.

Original languageEnglish
Pages (from-to)177-185
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3685
StatePublished - 1 Jan 1999
EventProceedings of the 1998 Laser Optics '98: Solid State Lasers - St. Petersburg, RUS
Duration: 22 Jun 1998 → 26 Jun 1998

    Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

ID: 32865120