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Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field. / Kulikov, A. G.; Blagov, A. E.; Marchenkov, N. V.; Lomonov, V. A.; Vinogradov, A. V.; Pisarevsky, Yu V.; Kovalchuk, M. V.

In: JETP Letters, Vol. 107, No. 10, 01.05.2018, p. 646-650.

Research output: Contribution to journalArticlepeer-review

Harvard

Kulikov, AG, Blagov, AE, Marchenkov, NV, Lomonov, VA, Vinogradov, AV, Pisarevsky, YV & Kovalchuk, MV 2018, 'Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field', JETP Letters, vol. 107, no. 10, pp. 646-650. https://doi.org/10.1134/S0021364018100120

APA

Kulikov, A. G., Blagov, A. E., Marchenkov, N. V., Lomonov, V. A., Vinogradov, A. V., Pisarevsky, Y. V., & Kovalchuk, M. V. (2018). Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field. JETP Letters, 107(10), 646-650. https://doi.org/10.1134/S0021364018100120

Vancouver

Kulikov AG, Blagov AE, Marchenkov NV, Lomonov VA, Vinogradov AV, Pisarevsky YV et al. Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field. JETP Letters. 2018 May 1;107(10):646-650. https://doi.org/10.1134/S0021364018100120

Author

Kulikov, A. G. ; Blagov, A. E. ; Marchenkov, N. V. ; Lomonov, V. A. ; Vinogradov, A. V. ; Pisarevsky, Yu V. ; Kovalchuk, M. V. / Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field. In: JETP Letters. 2018 ; Vol. 107, No. 10. pp. 646-650.

BibTeX

@article{ded7e93d716947d49cb83298eba412c4,
title = "Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field",
abstract = "The process of formation of surface structures in a paratellurite crystal (α-TeO2) in an external electric field has been studied by in situ X-ray diffraction (XRD) measurements. This process is reversible and its dynamics (duration of tens of minutes) corresponds to the formation of a screening layer near the insulator–metal interface owing to the counter migration of oxygen ions and vacancies in the external electric field. The formation of domains has been observed in the experiment as the broadening and splitting of the XRD curve and is explained by mechanical stresses that appear in the high electric field near the surface in view of the piezoelectric effect and are responsible for a ferroelectric α–β phase transition. A change in the lattice parameter near the anode (surface of the crystal with a positive external charge) has been detected simultaneously. This change is due to the local rearrangement of the crystal structure because of the inflow of oxygen ions in this region and outflow of oxygen vacancies.",
author = "Kulikov, {A. G.} and Blagov, {A. E.} and Marchenkov, {N. V.} and Lomonov, {V. A.} and Vinogradov, {A. V.} and Pisarevsky, {Yu V.} and Kovalchuk, {M. V.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Inc.",
year = "2018",
month = may,
day = "1",
doi = "10.1134/S0021364018100120",
language = "English",
volume = "107",
pages = "646--650",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field

AU - Kulikov, A. G.

AU - Blagov, A. E.

AU - Marchenkov, N. V.

AU - Lomonov, V. A.

AU - Vinogradov, A. V.

AU - Pisarevsky, Yu V.

AU - Kovalchuk, M. V.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Inc.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - The process of formation of surface structures in a paratellurite crystal (α-TeO2) in an external electric field has been studied by in situ X-ray diffraction (XRD) measurements. This process is reversible and its dynamics (duration of tens of minutes) corresponds to the formation of a screening layer near the insulator–metal interface owing to the counter migration of oxygen ions and vacancies in the external electric field. The formation of domains has been observed in the experiment as the broadening and splitting of the XRD curve and is explained by mechanical stresses that appear in the high electric field near the surface in view of the piezoelectric effect and are responsible for a ferroelectric α–β phase transition. A change in the lattice parameter near the anode (surface of the crystal with a positive external charge) has been detected simultaneously. This change is due to the local rearrangement of the crystal structure because of the inflow of oxygen ions in this region and outflow of oxygen vacancies.

AB - The process of formation of surface structures in a paratellurite crystal (α-TeO2) in an external electric field has been studied by in situ X-ray diffraction (XRD) measurements. This process is reversible and its dynamics (duration of tens of minutes) corresponds to the formation of a screening layer near the insulator–metal interface owing to the counter migration of oxygen ions and vacancies in the external electric field. The formation of domains has been observed in the experiment as the broadening and splitting of the XRD curve and is explained by mechanical stresses that appear in the high electric field near the surface in view of the piezoelectric effect and are responsible for a ferroelectric α–β phase transition. A change in the lattice parameter near the anode (surface of the crystal with a positive external charge) has been detected simultaneously. This change is due to the local rearrangement of the crystal structure because of the inflow of oxygen ions in this region and outflow of oxygen vacancies.

UR - http://www.scopus.com/inward/record.url?scp=85050554349&partnerID=8YFLogxK

U2 - 10.1134/S0021364018100120

DO - 10.1134/S0021364018100120

M3 - Article

AN - SCOPUS:85050554349

VL - 107

SP - 646

EP - 650

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -

ID: 88200275