Quantum Interference Controls the Electron Spin Dynamics in n -GaAs

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Quantum Interference Controls the Electron Spin Dynamics in n -GaAs. / Belykh, V. V.; Kuntsevich, A. Yu; Glazov, M. M.; Kavokin, K. V.; Yakovlev, D. R.; Bayer, M.

In: Physical Review X, Vol. 8, No. 3, 031021, 23.07.2018.

Research output: Contribution to journal › Article › peer-review

Author

Belykh, V. V. ; Kuntsevich, A. Yu ; Glazov, M. M. ; Kavokin, K. V. ; Yakovlev, D. R. ; Bayer, M. / Quantum Interference Controls the Electron Spin Dynamics in n -GaAs. In: Physical Review X. 2018 ; Vol. 8, No. 3.

BibTeX

@article{27ab999260bb4aaf9b193a000b7676ae,

title = "Quantum Interference Controls the Electron Spin Dynamics in n -GaAs",

abstract = "Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here, we show that weak localization becomes prominent also in optical spectroscopy via detection of the electron spin dynamics. In particular, we find that weak localization controls the free electron spin relaxation in semiconductors at low temperatures and weak magnetic fields by slowing it down by almost a factor of two in n-doped GaAs in the metallic phase. The weak localization effect on the spin relaxation is suppressed by moderate magnetic fields of approximately 1 T, which destroy the interference of electron trajectories, and by increasing the temperature. The weak localization suppression causes an anomalous decrease of the longitudinal electron spin relaxation time T1 with magnetic field, in stark contrast with the well-known magnetic-field-induced increase in T1. This is consistent with transport measurements, which show the same variation of resistivity with magnetic field. Our discovery opens up a vast playground to explore quantum magnetotransport effects optically in the spin dynamics.",

keywords = "LONGITUDINAL MAGNETIC-FIELD, NEGATIVE MAGNETORESISTANCE, WEAK-LOCALIZATION, INVERSION CENTER, LOW-TEMPERATURES, RELAXATION, SEMICONDUCTORS, CONDUCTIVITY, SCATTERING, MECHANISM",

author = "Belykh, {V. V.} and Kuntsevich, {A. Yu} and Glazov, {M. M.} and Kavokin, {K. V.} and Yakovlev, {D. R.} and M. Bayer",

year = "2018",

month = jul,

day = "23",

doi = "10.1103/PhysRevX.8.031021",

language = "English",

volume = "8",

journal = "Physical Review X",

issn = "2160-3308",

publisher = "American Physical Society",

number = "3",

}

RIS

TY - JOUR

T1 - Quantum Interference Controls the Electron Spin Dynamics in n -GaAs

AU - Belykh, V. V.

AU - Kuntsevich, A. Yu

AU - Glazov, M. M.

AU - Kavokin, K. V.

AU - Yakovlev, D. R.

AU - Bayer, M.

PY - 2018/7/23

Y1 - 2018/7/23

N2 - Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here, we show that weak localization becomes prominent also in optical spectroscopy via detection of the electron spin dynamics. In particular, we find that weak localization controls the free electron spin relaxation in semiconductors at low temperatures and weak magnetic fields by slowing it down by almost a factor of two in n-doped GaAs in the metallic phase. The weak localization effect on the spin relaxation is suppressed by moderate magnetic fields of approximately 1 T, which destroy the interference of electron trajectories, and by increasing the temperature. The weak localization suppression causes an anomalous decrease of the longitudinal electron spin relaxation time T1 with magnetic field, in stark contrast with the well-known magnetic-field-induced increase in T1. This is consistent with transport measurements, which show the same variation of resistivity with magnetic field. Our discovery opens up a vast playground to explore quantum magnetotransport effects optically in the spin dynamics.

AB - Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here, we show that weak localization becomes prominent also in optical spectroscopy via detection of the electron spin dynamics. In particular, we find that weak localization controls the free electron spin relaxation in semiconductors at low temperatures and weak magnetic fields by slowing it down by almost a factor of two in n-doped GaAs in the metallic phase. The weak localization effect on the spin relaxation is suppressed by moderate magnetic fields of approximately 1 T, which destroy the interference of electron trajectories, and by increasing the temperature. The weak localization suppression causes an anomalous decrease of the longitudinal electron spin relaxation time T1 with magnetic field, in stark contrast with the well-known magnetic-field-induced increase in T1. This is consistent with transport measurements, which show the same variation of resistivity with magnetic field. Our discovery opens up a vast playground to explore quantum magnetotransport effects optically in the spin dynamics.

KW - LONGITUDINAL MAGNETIC-FIELD

KW - NEGATIVE MAGNETORESISTANCE

KW - WEAK-LOCALIZATION

KW - INVERSION CENTER

KW - LOW-TEMPERATURES

KW - RELAXATION

KW - SEMICONDUCTORS

KW - CONDUCTIVITY

KW - SCATTERING

KW - MECHANISM

UR - http://www.scopus.com/inward/record.url?scp=85050922771&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/quantum-interference-controls-electron-spin-dynamics-n-gaas

U2 - 10.1103/PhysRevX.8.031021

DO - 10.1103/PhysRevX.8.031021

M3 - Article

AN - SCOPUS:85050922771

VL - 8

JO - Physical Review X

JF - Physical Review X

SN - 2160-3308

IS - 3

M1 - 031021

ER -

ID: 36006801