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Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures. / Tugushev, V. V.; Men'shov, V. N.; Shvets, I. A.; Chulkov, E. V.

In: Journal of Magnetism and Magnetic Materials, Vol. 459, 01.08.2018, p. 335-339.

Research output: Contribution to journal › Article › peer-review

Harvard

Tugushev, VV, Men'shov, VN, Shvets, IA & Chulkov, EV 2018, 'Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures', Journal of Magnetism and Magnetic Materials, vol. 459, pp. 335-339. https://doi.org/10.1016/j.jmmm.2017.09.054

APA

Tugushev, V. V., Men'shov, V. N., Shvets, I. A., & Chulkov, E. V. (2018). Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures. Journal of Magnetism and Magnetic Materials, 459, 335-339. https://doi.org/10.1016/j.jmmm.2017.09.054

Vancouver

Tugushev VV, Men'shov VN, Shvets IA, Chulkov EV. Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures. Journal of Magnetism and Magnetic Materials. 2018 Aug 1;459:335-339. https://doi.org/10.1016/j.jmmm.2017.09.054

Author

Tugushev, V. V. ; Men'shov, V. N. ; Shvets, I. A. ; Chulkov, E. V. / Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures. In: Journal of Magnetism and Magnetic Materials. 2018 ; Vol. 459. pp. 335-339.

BibTeX

@article{94d8484dec304a6d8d4a5cb44fb572b4,
title = "Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures",
abstract = "Today, searching for materials hosting quantum anomalous Hall effect (QAHE) at high temperature and with long conductivity plateau is an important issue for next generation spintronic applications at nanoscale. In this article, we discuss a quantized spin Hall response in heterostructures composed of a three-dimensional topological insulator (TI) film and a ferromagnetic normal insulator (FMNI). The magnetic proximity effect at the TI/FMNI interface provides exchange splitting of the topological states in the TI film. We predict analytically that the FMNI/TI/FMNI trilayer can be driven into the QAHE state either from the topologically trivial state or the quantum spin Hall state, depending on the TI film thickness and the interface potential. We calculate the corresponding phase diagram of the FMNI/TI/FMNI trilayer. Our results provide a useful guide to realize the QAHE regime in the TI/FMNI heterostructures.",
keywords = "Interface states, Quantum anomalous Hall effect, Topological insulator, STATES",
author = "Tugushev, {V. V.} and Men'shov, {V. N.} and Shvets, {I. A.} and Chulkov, {E. V.}",
year = "2018",
month = aug,
day = "1",
doi = "10.1016/j.jmmm.2017.09.054",
language = "English",
volume = "459",
pages = "335--339",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures

AU - Tugushev, V. V.

AU - Men'shov, V. N.

AU - Shvets, I. A.

AU - Chulkov, E. V.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Today, searching for materials hosting quantum anomalous Hall effect (QAHE) at high temperature and with long conductivity plateau is an important issue for next generation spintronic applications at nanoscale. In this article, we discuss a quantized spin Hall response in heterostructures composed of a three-dimensional topological insulator (TI) film and a ferromagnetic normal insulator (FMNI). The magnetic proximity effect at the TI/FMNI interface provides exchange splitting of the topological states in the TI film. We predict analytically that the FMNI/TI/FMNI trilayer can be driven into the QAHE state either from the topologically trivial state or the quantum spin Hall state, depending on the TI film thickness and the interface potential. We calculate the corresponding phase diagram of the FMNI/TI/FMNI trilayer. Our results provide a useful guide to realize the QAHE regime in the TI/FMNI heterostructures.

AB - Today, searching for materials hosting quantum anomalous Hall effect (QAHE) at high temperature and with long conductivity plateau is an important issue for next generation spintronic applications at nanoscale. In this article, we discuss a quantized spin Hall response in heterostructures composed of a three-dimensional topological insulator (TI) film and a ferromagnetic normal insulator (FMNI). The magnetic proximity effect at the TI/FMNI interface provides exchange splitting of the topological states in the TI film. We predict analytically that the FMNI/TI/FMNI trilayer can be driven into the QAHE state either from the topologically trivial state or the quantum spin Hall state, depending on the TI film thickness and the interface potential. We calculate the corresponding phase diagram of the FMNI/TI/FMNI trilayer. Our results provide a useful guide to realize the QAHE regime in the TI/FMNI heterostructures.

KW - Interface states

KW - Quantum anomalous Hall effect

KW - Topological insulator

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=85030780083&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2017.09.054

DO - 10.1016/j.jmmm.2017.09.054

M3 - Article

AN - SCOPUS:85030780083

VL - 459

SP - 335

EP - 339

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -

ID: 36281232