Proton transfer as a feedback in the semiconductor-electrolyte interface

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Proton transfer as a feedback in the semiconductor-electrolyte interface. / Bogevolnov, V. B.; Yafyasov, A. M.; Pavlovskaya, I. Yu.

In: Surface Science, Vol. 691, 121508, 01.2020.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{8e5a46a353f54a39ba1950c8d3880512,

title = "Proton transfer as a feedback in the semiconductor-electrolyte interface",

abstract = "The electrolyte-semiconductor interface is widely spread in physical, chemical, and biological systems, which makes the task of refining the physical interface model relevant for the development of studies of living and nonliving systems. When studying the properties of the solid-liquid interface, traditionally the main attention is paid to the most structurally mobile part of the system, namely the liquid, under the assumption that the ion structure of the near surface region of the solid remains unchanged. This article presents the results of numerical simulation of the electronic properties of the interface depending on the course of the potential in the subsurface layer of a semiconductor in the presence of mobile ions inside it. In this case, the properties of the classical and dimensionally quantized space charge region of the semiconductor are also compared. It is shown that the transport time of hydrogen ions in the subsurface region of Ge and the polarization time of the interface in the practical application of the field effect are of the same scale. This does not allow one to neglect the transport of ions in the space charge region of the semiconductor when interpreting the experimental data. The numerical data are given for the room temperature.",

keywords = "Field effect, Ge:H, Ge:OH, Proton transfer, SCR, Semiconductor-electrolyte system, GERMANIUM, EVOLUTION, REDUCTION",

author = "Bogevolnov, {V. B.} and Yafyasov, {A. M.} and Pavlovskaya, {I. Yu.}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2020",

month = jan,

doi = "10.1016/j.susc.2019.121508",

language = "English",

volume = "691",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Proton transfer as a feedback in the semiconductor-electrolyte interface

AU - Bogevolnov, V. B.

AU - Yafyasov, A. M.

AU - Pavlovskaya, I. Yu.

PY - 2020/1

Y1 - 2020/1

N2 - The electrolyte-semiconductor interface is widely spread in physical, chemical, and biological systems, which makes the task of refining the physical interface model relevant for the development of studies of living and nonliving systems. When studying the properties of the solid-liquid interface, traditionally the main attention is paid to the most structurally mobile part of the system, namely the liquid, under the assumption that the ion structure of the near surface region of the solid remains unchanged. This article presents the results of numerical simulation of the electronic properties of the interface depending on the course of the potential in the subsurface layer of a semiconductor in the presence of mobile ions inside it. In this case, the properties of the classical and dimensionally quantized space charge region of the semiconductor are also compared. It is shown that the transport time of hydrogen ions in the subsurface region of Ge and the polarization time of the interface in the practical application of the field effect are of the same scale. This does not allow one to neglect the transport of ions in the space charge region of the semiconductor when interpreting the experimental data. The numerical data are given for the room temperature.

AB - The electrolyte-semiconductor interface is widely spread in physical, chemical, and biological systems, which makes the task of refining the physical interface model relevant for the development of studies of living and nonliving systems. When studying the properties of the solid-liquid interface, traditionally the main attention is paid to the most structurally mobile part of the system, namely the liquid, under the assumption that the ion structure of the near surface region of the solid remains unchanged. This article presents the results of numerical simulation of the electronic properties of the interface depending on the course of the potential in the subsurface layer of a semiconductor in the presence of mobile ions inside it. In this case, the properties of the classical and dimensionally quantized space charge region of the semiconductor are also compared. It is shown that the transport time of hydrogen ions in the subsurface region of Ge and the polarization time of the interface in the practical application of the field effect are of the same scale. This does not allow one to neglect the transport of ions in the space charge region of the semiconductor when interpreting the experimental data. The numerical data are given for the room temperature.

KW - Field effect

KW - Ge:H

KW - Ge:OH

KW - Proton transfer

KW - SCR

KW - Semiconductor-electrolyte system

KW - GERMANIUM

KW - EVOLUTION

KW - REDUCTION

UR - http://www.scopus.com/inward/record.url?scp=85072763222&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/d25f7446-9385-3abd-8fb2-f493964f2072/

U2 - 10.1016/j.susc.2019.121508

DO - 10.1016/j.susc.2019.121508

M3 - Article

AN - SCOPUS:85072763222

VL - 691

JO - Surface Science

JF - Surface Science

SN - 0039-6028

M1 - 121508

ER -

ID: 47860360