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Properties of Compliant Substrates based on Porous Silicon formed by Two-stage Etching. / Seredin, P. V.; Len’shin, A. S.; Radam, Ali Obaid; Khuder, Abduljabbar Riyad; Goloshchapov, D. L.; Harajidi, M. A.; Arsentyev, I. N.; Kasatkin, I. A.

In: Semiconductors, Vol. 56, No. 4, 29.06.2022, p. 259-265.

Research output: Contribution to journal › Article › peer-review

Harvard

Seredin, PV, Len’shin, AS, Radam, AO, Khuder, AR, Goloshchapov, DL, Harajidi, MA, Arsentyev, IN & Kasatkin, IA 2022, 'Properties of Compliant Substrates based on Porous Silicon formed by Two-stage Etching', Semiconductors, vol. 56, no. 4, pp. 259-265. https://doi.org/10.1134/s1063782622040042

APA

Seredin, P. V., Len’shin, A. S., Radam, A. O., Khuder, A. R., Goloshchapov, D. L., Harajidi, M. A., Arsentyev, I. N., & Kasatkin, I. A. (2022). Properties of Compliant Substrates based on Porous Silicon formed by Two-stage Etching. Semiconductors, 56(4), 259-265. https://doi.org/10.1134/s1063782622040042

Vancouver

Seredin PV, Len’shin AS, Radam AO, Khuder AR, Goloshchapov DL, Harajidi MA et al. Properties of Compliant Substrates based on Porous Silicon formed by Two-stage Etching. Semiconductors. 2022 Jun 29;56(4):259-265. https://doi.org/10.1134/s1063782622040042

Author

Seredin, P. V. ; Len’shin, A. S. ; Radam, Ali Obaid ; Khuder, Abduljabbar Riyad ; Goloshchapov, D. L. ; Harajidi, M. A. ; Arsentyev, I. N. ; Kasatkin, I. A. / Properties of Compliant Substrates based on Porous Silicon formed by Two-stage Etching. In: Semiconductors. 2022 ; Vol. 56, No. 4. pp. 259-265.

BibTeX

@article{f28f7686f1f54c19b71a713ad32ffcbc,
title = "Properties of Compliant Substrates based on Porous Silicon formed by Two-stage Etching",
abstract = "Abstract—Our work reports on the influence of etching modes and their combination on the design, microstructural and optical properties of compliant substrates based on porous silicon. It is shown on the basis of the data of a set of microstructural and spectroscopic methods of analysis that at constant lattice parameters, the magnitude of residual stresses, the size of crystallites, the volume of the crystalline fraction, as well as the reflectivity and energy of direct transitions in the porous silicon layer depend on the combination of etching modes, but do not always correlate with the value of the layer porosity calculated from the analysis of SEM images.",
keywords = "compliant substrate, porous layer, Si",
author = "Seredin, {P. V.} and Len{\textquoteright}shin, {A. S.} and Radam, {Ali Obaid} and Khuder, {Abduljabbar Riyad} and Goloshchapov, {D. L.} and Harajidi, {M. A.} and Arsentyev, {I. N.} and Kasatkin, {I. A.}",
note = "Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Ltd.",
year = "2022",
month = jun,
day = "29",
doi = "10.1134/s1063782622040042",
language = "English",
volume = "56",
pages = "259--265",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - Properties of Compliant Substrates based on Porous Silicon formed by Two-stage Etching

AU - Seredin, P. V.

AU - Len’shin, A. S.

AU - Radam, Ali Obaid

AU - Khuder, Abduljabbar Riyad

AU - Goloshchapov, D. L.

AU - Harajidi, M. A.

AU - Arsentyev, I. N.

AU - Kasatkin, I. A.

N1 - Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/6/29

Y1 - 2022/6/29

N2 - Abstract—Our work reports on the influence of etching modes and their combination on the design, microstructural and optical properties of compliant substrates based on porous silicon. It is shown on the basis of the data of a set of microstructural and spectroscopic methods of analysis that at constant lattice parameters, the magnitude of residual stresses, the size of crystallites, the volume of the crystalline fraction, as well as the reflectivity and energy of direct transitions in the porous silicon layer depend on the combination of etching modes, but do not always correlate with the value of the layer porosity calculated from the analysis of SEM images.

AB - Abstract—Our work reports on the influence of etching modes and their combination on the design, microstructural and optical properties of compliant substrates based on porous silicon. It is shown on the basis of the data of a set of microstructural and spectroscopic methods of analysis that at constant lattice parameters, the magnitude of residual stresses, the size of crystallites, the volume of the crystalline fraction, as well as the reflectivity and energy of direct transitions in the porous silicon layer depend on the combination of etching modes, but do not always correlate with the value of the layer porosity calculated from the analysis of SEM images.

KW - compliant substrate

KW - porous layer

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=85133153625&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/cf590a09-8da7-344b-b535-da3d09bdbdbf/

U2 - 10.1134/s1063782622040042

DO - 10.1134/s1063782622040042

M3 - Article

AN - SCOPUS:85133153625

VL - 56

SP - 259

EP - 265

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 97105481