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Preparation of oxidized PbSeO 3 films from PbSe films. / Tomaev, V. V.; Petrov, Yu V.

In: Glass Physics and Chemistry, Vol. 38, No. 2, 01.04.2012, p. 240-244.

Research output: Contribution to journal › Article › peer-review

Harvard

Tomaev, VV & Petrov, YV 2012, 'Preparation of oxidized PbSeO 3 films from PbSe films', Glass Physics and Chemistry, vol. 38, no. 2, pp. 240-244. https://doi.org/10.1134/S1087659612020113

APA

Tomaev, V. V., & Petrov, Y. V. (2012). Preparation of oxidized PbSeO 3 films from PbSe films. Glass Physics and Chemistry, 38(2), 240-244. https://doi.org/10.1134/S1087659612020113

Vancouver

Tomaev VV, Petrov YV. Preparation of oxidized PbSeO 3 films from PbSe films. Glass Physics and Chemistry. 2012 Apr 1;38(2):240-244. https://doi.org/10.1134/S1087659612020113

Author

Tomaev, V. V. ; Petrov, Yu V. / Preparation of oxidized PbSeO 3 films from PbSe films. In: Glass Physics and Chemistry. 2012 ; Vol. 38, No. 2. pp. 240-244.

BibTeX

@article{5f400e87194f43b8931b48037a2fa407,
title = "Preparation of oxidized PbSeO 3 films from PbSe films",
abstract = "Lead selenide nanocrystalline films of a controlled thickness have been obtained using vacuum deposition onto substrates of C-29 glass, part of which were oxidized in a dry air atmosphere. The surfaces and cleavages of both initial and oxidized PbSe films are studied using scanning electron microscopy. The qualitative and quantitative estimation of the elemental content in the subsurface region of all studied films based on PbSe is investigated using X-ray microanalysis. The presence of lead selenide and lead selenite on the surface of the films under study is proven, and the principle possibility of forming PbSeO3 films from PbSe films is shown.",
keywords = "Chalkogenide, Lead selenide, Lead selenite, Narrow-gap semiconductor, Oxide",
author = "Tomaev, {V. V.} and Petrov, {Yu V.}",
year = "2012",
month = apr,
day = "1",
doi = "10.1134/S1087659612020113",
language = "English",
volume = "38",
pages = "240--244",
journal = "Glass Physics and Chemistry",
issn = "1087-6596",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Preparation of oxidized PbSeO 3 films from PbSe films

AU - Tomaev, V. V.

AU - Petrov, Yu V.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - Lead selenide nanocrystalline films of a controlled thickness have been obtained using vacuum deposition onto substrates of C-29 glass, part of which were oxidized in a dry air atmosphere. The surfaces and cleavages of both initial and oxidized PbSe films are studied using scanning electron microscopy. The qualitative and quantitative estimation of the elemental content in the subsurface region of all studied films based on PbSe is investigated using X-ray microanalysis. The presence of lead selenide and lead selenite on the surface of the films under study is proven, and the principle possibility of forming PbSeO3 films from PbSe films is shown.

AB - Lead selenide nanocrystalline films of a controlled thickness have been obtained using vacuum deposition onto substrates of C-29 glass, part of which were oxidized in a dry air atmosphere. The surfaces and cleavages of both initial and oxidized PbSe films are studied using scanning electron microscopy. The qualitative and quantitative estimation of the elemental content in the subsurface region of all studied films based on PbSe is investigated using X-ray microanalysis. The presence of lead selenide and lead selenite on the surface of the films under study is proven, and the principle possibility of forming PbSeO3 films from PbSe films is shown.

KW - Chalkogenide

KW - Lead selenide

KW - Lead selenite

KW - Narrow-gap semiconductor

KW - Oxide

UR - http://www.scopus.com/inward/record.url?scp=84862085878&partnerID=8YFLogxK

U2 - 10.1134/S1087659612020113

DO - 10.1134/S1087659612020113

M3 - Article

AN - SCOPUS:84862085878

VL - 38

SP - 240

EP - 244

JO - Glass Physics and Chemistry

JF - Glass Physics and Chemistry

SN - 1087-6596

IS - 2

ER -

ID: 35937309