Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium-to-Oxygen Ratios

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Polymorphism and Faceting in Ga₂O₃ Layers Grown by HVPE at Various Gallium-to-Oxygen Ratios. / Shapenkov, Sevastian ; Vyvenko, Oleg; Nikolaev, Vladimir; Stepanov, Sergei; Pechnikov, Alexei; Scheglov, Mikhail; Varygin, Georgiy.

In: Physica Status Solidi (B) Basic Research, 05.11.2021.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{5dc4d2eff0b34c69bb28e0492ff41985,

title = "Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium-to-Oxygen Ratios",

abstract = "Herein, the influence of the oxygen flow on the formation of metastable polymorphs of gallium oxide (Ga2O3) grown by halide vapor phase epitaxy (HVPE) on c-plane patterned sapphire substrates (PSS), on gallium nitride (GaN) templates, and on m-plane smooth sapphire substrates is reported. X-ray diffraction, scanning electron microscopy, and cathodoluminescence are used to identify different polymorphic phases. The samples deposited on bare PSS exhibit faceted growth of the α-Ga2O3 on the cones of the sapphire substrate and the formation of the κ-Ga2O3 between the cones. In contrast, growth on GaN templates results in hexagonal columns of κ-Ga2O3 which produce a continuous smooth layer upon coalescence. The growth of Ga2O3 on m-plane sapphire substrates results in overgrown pyramids of the α-phase. For all types of substrates, the variation of the oxygen flow affects only the thickness and coalescence of Ga2O3 layers. Thus, the growth of Ga2O3 metastable polymorphs is mainly influenced by the form, orientation, and symmetry of the substrate and shows a weak dependence on stoichiometry.",

keywords = "cathodoluminescence, gallium oxide, HVPE, reticular density, SEM, XRD, EPITAXY, PHASE, OXIDE, EPSILON-GA2O3",

author = "Sevastian Shapenkov and Oleg Vyvenko and Vladimir Nikolaev and Sergei Stepanov and Alexei Pechnikov and Mikhail Scheglov and Georgiy Varygin",

note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = nov,

day = "5",

doi = "10.1002/pssb.202100331",

language = "English",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-Blackwell",

}

RIS

TY - JOUR

T1 - Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium-to-Oxygen Ratios

AU - Shapenkov, Sevastian

AU - Vyvenko, Oleg

AU - Nikolaev, Vladimir

AU - Stepanov, Sergei

AU - Pechnikov, Alexei

AU - Scheglov, Mikhail

AU - Varygin, Georgiy

PY - 2021/11/5

Y1 - 2021/11/5

N2 - Herein, the influence of the oxygen flow on the formation of metastable polymorphs of gallium oxide (Ga2O3) grown by halide vapor phase epitaxy (HVPE) on c-plane patterned sapphire substrates (PSS), on gallium nitride (GaN) templates, and on m-plane smooth sapphire substrates is reported. X-ray diffraction, scanning electron microscopy, and cathodoluminescence are used to identify different polymorphic phases. The samples deposited on bare PSS exhibit faceted growth of the α-Ga2O3 on the cones of the sapphire substrate and the formation of the κ-Ga2O3 between the cones. In contrast, growth on GaN templates results in hexagonal columns of κ-Ga2O3 which produce a continuous smooth layer upon coalescence. The growth of Ga2O3 on m-plane sapphire substrates results in overgrown pyramids of the α-phase. For all types of substrates, the variation of the oxygen flow affects only the thickness and coalescence of Ga2O3 layers. Thus, the growth of Ga2O3 metastable polymorphs is mainly influenced by the form, orientation, and symmetry of the substrate and shows a weak dependence on stoichiometry.

AB - Herein, the influence of the oxygen flow on the formation of metastable polymorphs of gallium oxide (Ga2O3) grown by halide vapor phase epitaxy (HVPE) on c-plane patterned sapphire substrates (PSS), on gallium nitride (GaN) templates, and on m-plane smooth sapphire substrates is reported. X-ray diffraction, scanning electron microscopy, and cathodoluminescence are used to identify different polymorphic phases. The samples deposited on bare PSS exhibit faceted growth of the α-Ga2O3 on the cones of the sapphire substrate and the formation of the κ-Ga2O3 between the cones. In contrast, growth on GaN templates results in hexagonal columns of κ-Ga2O3 which produce a continuous smooth layer upon coalescence. The growth of Ga2O3 on m-plane sapphire substrates results in overgrown pyramids of the α-phase. For all types of substrates, the variation of the oxygen flow affects only the thickness and coalescence of Ga2O3 layers. Thus, the growth of Ga2O3 metastable polymorphs is mainly influenced by the form, orientation, and symmetry of the substrate and shows a weak dependence on stoichiometry.

KW - cathodoluminescence

KW - gallium oxide

KW - HVPE

KW - reticular density

KW - SEM

KW - XRD

KW - EPITAXY

KW - PHASE

KW - OXIDE

KW - EPSILON-GA2O3

UR - http://www.scopus.com/inward/record.url?scp=85118474402&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/355ccd44-bbe0-3d86-ba2c-d0706e8305d4/

U2 - 10.1002/pssb.202100331

DO - 10.1002/pssb.202100331

M3 - Article

AN - SCOPUS:85118474402

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

M1 - 2100331

ER -

ID: 88646325