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Plasmon-enhanced Electron Scattering in Nanostructured Thin Metal Films Revealed by Low-voltage Scanning Electron Microscopy. / Mikhailovskii, V.; Petrov, Yu.; Vyvenko, O.

In: AIP Conference Proceedings, Vol. 1748, No. 1, 2016.

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@article{64d513fb79ea4ffda2fdc459f744481a,
title = "Plasmon-enhanced Electron Scattering in Nanostructured Thin Metal Films Revealed by Low-voltage Scanning Electron Microscopy",
abstract = "The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.",
author = "V. Mikhailovskii and Yu. Petrov and O. Vyvenko",
year = "2016",
doi = "10.1063/1.4954339",
language = "English",
volume = "1748",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics",
number = "1",
note = "5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016 ; Conference date: 26-04-2016 Through 29-04-2016",
url = "http://www.globaleventslist.elsevier.com/events/2016/04/strann-2016-state-of-the-art-trends-of-scientific-research-of-artificial-and-natural-nanoobjects/, http://eibl.spbu.ru/strann-2016/",

}

RIS

TY - JOUR

T1 - Plasmon-enhanced Electron Scattering in Nanostructured Thin Metal Films Revealed by Low-voltage Scanning Electron Microscopy

AU - Mikhailovskii, V.

AU - Petrov, Yu.

AU - Vyvenko, O.

N1 - Conference code: 5

PY - 2016

Y1 - 2016

N2 - The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

AB - The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

U2 - 10.1063/1.4954339

DO - 10.1063/1.4954339

M3 - Conference article

VL - 1748

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

IS - 1

T2 - 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects

Y2 - 26 April 2016 through 29 April 2016

ER -

ID: 73844927