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Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode. / Komolov, A.; Schaumburg, K.; Monakhov, V.

In: Thin Solid Films, Vol. 311, No. 1-2, 31.12.1997, p. 259-261.

Research output: Contribution to journal › Article › peer-review

Harvard

Komolov, A, Schaumburg, K & Monakhov, V 1997, 'Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode', Thin Solid Films, vol. 311, no. 1-2, pp. 259-261. https://doi.org/10.1016/S0040-6090(97)00446-X

APA

Komolov, A., Schaumburg, K., & Monakhov, V. (1997). Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode. Thin Solid Films, 311(1-2), 259-261. https://doi.org/10.1016/S0040-6090(97)00446-X

Vancouver

Komolov A, Schaumburg K, Monakhov V. Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode. Thin Solid Films. 1997 Dec 31;311(1-2):259-261. https://doi.org/10.1016/S0040-6090(97)00446-X

Author

Komolov, A. ; Schaumburg, K. ; Monakhov, V. / Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode. In: Thin Solid Films. 1997 ; Vol. 311, No. 1-2. pp. 259-261.

BibTeX

@article{93e91611f7c0457ab94d9beeca17203f,
title = "Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode",
abstract = "Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (∼100 nm thick) on the n-Si substrate with semitransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 1014 photons cm-2 s-1 in the wavelength range 300-900 nm. The results are related to the major role of the film/substrate interface and to the films optical absorption features.",
keywords = "Interfaces, Langmuir-Blodgett films (LB films), Photovoltage, Semiconductors",
author = "A. Komolov and K. Schaumburg and V. Monakhov",
year = "1997",
month = dec,
day = "31",
doi = "10.1016/S0040-6090(97)00446-X",
language = "English",
volume = "311",
pages = "259--261",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

RIS

TY - JOUR

T1 - Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode

AU - Komolov, A.

AU - Schaumburg, K.

AU - Monakhov, V.

PY - 1997/12/31

Y1 - 1997/12/31

N2 - Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (∼100 nm thick) on the n-Si substrate with semitransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 1014 photons cm-2 s-1 in the wavelength range 300-900 nm. The results are related to the major role of the film/substrate interface and to the films optical absorption features.

AB - Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (∼100 nm thick) on the n-Si substrate with semitransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 1014 photons cm-2 s-1 in the wavelength range 300-900 nm. The results are related to the major role of the film/substrate interface and to the films optical absorption features.

KW - Interfaces

KW - Langmuir-Blodgett films (LB films)

KW - Photovoltage

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=0031355766&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(97)00446-X

DO - 10.1016/S0040-6090(97)00446-X

M3 - Article

AN - SCOPUS:0031355766

VL - 311

SP - 259

EP - 261

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

ID: 34885741