Photoluminescence of Degenerate Electron Gas in GaAs:Si Layers Grown by Molecular-Beam Epitaxy Semiconductors › SPbU Researchers Portal

Photoluminescence of Degenerate Electron Gas in GaAs:Si Layers Grown by Molecular-Beam Epitaxy Semiconductors

Research output: Contribution to journal › Article › peer-review

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A.P. Abramov
I.N. Abramova
S.Y. Verbin
I.Y. Gerlovin
S.R. Grigorev
I.V. Ignatev
O.Z. Karimov
A.B. Novikov
B.N. Novikov

Original language	Undefined
Pages (from-to)	647-649
Journal	Semiconductors
Volume	27
Issue number	7
State	Published - 1993
Externally published	Yes

ID: 5036897