Standard

Photoluminescence of 1.8 ML InAs quantum dots grown by SMEE on GaAs (100) misoriented surface. / Juferev, R.B.; Novikov, A.B.; Novikov, B.V.; Verbin, S.Yu.; Dinh, Son Thach; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Cirlin, G.E.; Dubrovskii, V.G.; Petrov, V.N.

Proceedings of the 6th International Symposium «Nanostructures: physics and technology 98». 1998. p. 204-207.

Research output: Chapter in Book/Report/Conference proceedingArticle in an anthologyResearch

Harvard

Juferev, RB, Novikov, AB, Novikov, BV, Verbin, SY, Dinh, ST, Gobsch, G, Goldhahn, R, Stein, N, Golombek, A, Cirlin, GE, Dubrovskii, VG & Petrov, VN 1998, Photoluminescence of 1.8 ML InAs quantum dots grown by SMEE on GaAs (100) misoriented surface. in Proceedings of the 6th International Symposium «Nanostructures: physics and technology 98». pp. 204-207. <http://elibrary.ru/item.asp?id=9168372>

APA

Juferev, R. B., Novikov, A. B., Novikov, B. V., Verbin, S. Y., Dinh, S. T., Gobsch, G., Goldhahn, R., Stein, N., Golombek, A., Cirlin, G. E., Dubrovskii, V. G., & Petrov, V. N. (1998). Photoluminescence of 1.8 ML InAs quantum dots grown by SMEE on GaAs (100) misoriented surface. In Proceedings of the 6th International Symposium «Nanostructures: physics and technology 98» (pp. 204-207) http://elibrary.ru/item.asp?id=9168372

Vancouver

Juferev RB, Novikov AB, Novikov BV, Verbin SY, Dinh ST, Gobsch G et al. Photoluminescence of 1.8 ML InAs quantum dots grown by SMEE on GaAs (100) misoriented surface. In Proceedings of the 6th International Symposium «Nanostructures: physics and technology 98». 1998. p. 204-207

Author

Juferev, R.B. ; Novikov, A.B. ; Novikov, B.V. ; Verbin, S.Yu. ; Dinh, Son Thach ; Gobsch, G. ; Goldhahn, R. ; Stein, N. ; Golombek, A. ; Cirlin, G.E. ; Dubrovskii, V.G. ; Petrov, V.N. / Photoluminescence of 1.8 ML InAs quantum dots grown by SMEE on GaAs (100) misoriented surface. Proceedings of the 6th International Symposium «Nanostructures: physics and technology 98». 1998. pp. 204-207

BibTeX

@inbook{4b5957aea2d645879cfac4a24bd70d19,
title = "Photoluminescence of 1.8 ML InAs quantum dots grown by SMEE on GaAs (100) misoriented surface",
author = "R.B. Juferev and A.B. Novikov and B.V. Novikov and S.Yu. Verbin and Dinh, {Son Thach} and G. Gobsch and R. Goldhahn and N. Stein and A. Golombek and G.E. Cirlin and V.G. Dubrovskii and V.N. Petrov",
year = "1998",
language = "не определен",
pages = "204--207",
booktitle = "Proceedings of the 6th International Symposium «Nanostructures: physics and technology 98»",

}

RIS

TY - CHAP

T1 - Photoluminescence of 1.8 ML InAs quantum dots grown by SMEE on GaAs (100) misoriented surface

AU - Juferev, R.B.

AU - Novikov, A.B.

AU - Novikov, B.V.

AU - Verbin, S.Yu.

AU - Dinh, Son Thach

AU - Gobsch, G.

AU - Goldhahn, R.

AU - Stein, N.

AU - Golombek, A.

AU - Cirlin, G.E.

AU - Dubrovskii, V.G.

AU - Petrov, V.N.

PY - 1998

Y1 - 1998

M3 - статья в сборнике

SP - 204

EP - 207

BT - Proceedings of the 6th International Symposium «Nanostructures: physics and technology 98»

ER -

ID: 4406815