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Photoinduced transformations in Ga-Ge-S : EEr films prepared by laser deposition. / Tverjanovich, A. S.; Borisov, E. N.; Sokolova, O. A.; Tver'Yanovich, Yu S.

In: Glass Physics and Chemistry, Vol. 31, No. 2, 01.03.2005, p. 173-176.

Research output: Contribution to journal › Article › peer-review

Harvard

Tverjanovich, AS, Borisov, EN, Sokolova, OA & Tver'Yanovich, YS 2005, 'Photoinduced transformations in Ga-Ge-S: EEr films prepared by laser deposition', Glass Physics and Chemistry, vol. 31, no. 2, pp. 173-176. https://doi.org/10.1007/s10720-005-0041-9

APA

Tverjanovich, A. S., Borisov, E. N., Sokolova, O. A., & Tver'Yanovich, Y. S. (2005). Photoinduced transformations in Ga-Ge-S: EEr films prepared by laser deposition. Glass Physics and Chemistry, 31(2), 173-176. https://doi.org/10.1007/s10720-005-0041-9

Vancouver

Tverjanovich AS, Borisov EN, Sokolova OA, Tver'Yanovich YS. Photoinduced transformations in Ga-Ge-S: EEr films prepared by laser deposition. Glass Physics and Chemistry. 2005 Mar 1;31(2):173-176. https://doi.org/10.1007/s10720-005-0041-9

Author

Tverjanovich, A. S. ; Borisov, E. N. ; Sokolova, O. A. ; Tver'Yanovich, Yu S. / Photoinduced transformations in Ga-Ge-S : EEr films prepared by laser deposition. In: Glass Physics and Chemistry. 2005 ; Vol. 31, No. 2. pp. 173-176.

BibTeX

@article{d06f7404d0584ec7ae267bbb3f80b0f7,
title = "Photoinduced transformations in Ga-Ge-S: EEr films prepared by laser deposition",
abstract = "Films in the Ga2S3-GeS2-Er 2S3 system are prepared through ultraviolet laser deposition. It is found that the films are characterized by the photobleaching effect whose magnitude can be as large as 120 nm. In this case, the refractive index decreases by 15%. The mechanism responsible for the revealed effect is proposed, and image recording is accomplished.",
author = "Tverjanovich, {A. S.} and Borisov, {E. N.} and Sokolova, {O. A.} and Tver'Yanovich, {Yu S.}",
year = "2005",
month = mar,
day = "1",
doi = "10.1007/s10720-005-0041-9",
language = "English",
volume = "31",
pages = "173--176",
journal = "Glass Physics and Chemistry",
issn = "1087-6596",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Photoinduced transformations in Ga-Ge-S

T2 - EEr films prepared by laser deposition

AU - Tverjanovich, A. S.

AU - Borisov, E. N.

AU - Sokolova, O. A.

AU - Tver'Yanovich, Yu S.

PY - 2005/3/1

Y1 - 2005/3/1

N2 - Films in the Ga2S3-GeS2-Er 2S3 system are prepared through ultraviolet laser deposition. It is found that the films are characterized by the photobleaching effect whose magnitude can be as large as 120 nm. In this case, the refractive index decreases by 15%. The mechanism responsible for the revealed effect is proposed, and image recording is accomplished.

AB - Films in the Ga2S3-GeS2-Er 2S3 system are prepared through ultraviolet laser deposition. It is found that the films are characterized by the photobleaching effect whose magnitude can be as large as 120 nm. In this case, the refractive index decreases by 15%. The mechanism responsible for the revealed effect is proposed, and image recording is accomplished.

UR - http://www.scopus.com/inward/record.url?scp=18744413265&partnerID=8YFLogxK

U2 - 10.1007/s10720-005-0041-9

DO - 10.1007/s10720-005-0041-9

M3 - Article

AN - SCOPUS:18744413265

VL - 31

SP - 173

EP - 176

JO - Glass Physics and Chemistry

JF - Glass Physics and Chemistry

SN - 1087-6596

IS - 2

ER -

ID: 34617480